References
- M. Bonnel, N. Duhamel, L. Haji, B. Loisel and J. Stoemenos, IEEE Electron Device Lett., 14, 551 (1993). https://doi.org/10.1109/55.260786
- S. Noguchi, S. Kiyama, S. Tsuda and S. Nakano, Jpn. J. Appl. Phys., 32, 6190 (1993). https://doi.org/10.1143/JJAP.32.6190
- K. Shimizu, O. Sugiura and M. Matsumura, IEEE Trans. Electron Devices, 40, 112 (1993). https://doi.org/10.1109/16.249432
- R. Bachrach, K. Winer, J. Boyce, S. Ready, R. Johnson and G. Anderson, J. Electron. Mater., 19, 241 (1990). https://doi.org/10.1007/BF02733813
- G. Giust and T. Sigmon, IEEE Trans. Electron Devices, 45, 925 (1998). https://doi.org/10.1109/16.662804
- D. Fork, G. Anderson, J. Boyce, R. Johnson and P. Mei, Appl. Phys. Lett., 68, 2138. (1996) https://doi.org/10.1063/1.115610
- R. Cammarata, C. Thompson, C. Hayzelden and K. Tu, J. Mater. Res., 5, 2133 (1990). https://doi.org/10.1557/JMR.1990.2133
- O. Nast and A. J. Hartmann, J. Appl. Phys., 88, 716 (2000). https://doi.org/10.1063/1.373727
- J. B. Lee, C. J. Lee and D. K. Choi, Jpn. J. Appl. Phys., 40, 6177 (2001). https://doi.org/10.1143/JJAP.40.6177
- D. Murley, N. Young, M. Trainor and D. McCulloch, IEEE Trans. Electron Devices, 48, 1145 (2001). https://doi.org/10.1109/16.925240
- H. Kobayashi, Y. L. Liu, Y. Yamashita, J. Ivan o, S. Imai and M. Takahashi, Sol. Energy, 80, 645 (2006). https://doi.org/10.1016/j.solener.2005.12.001
- N. Fujiwara, Y. L. Liu, M. Takahashi and H. Kobayashi, J. Electrochem. Soc., 153, G394 (2006). https://doi.org/10.1149/1.2178649
- M. Takahashi, Y. L. Liu, N. Fujiwara, H. Iwasa and H. Kobayashi, Solid State Commun., 137, 263 (2006). https://doi.org/10.1016/j.ssc.2005.11.027
- M. Madani, Y. L. Liu, M. Takahashi, H. Iwasa and H. Kobayashi, J. Electrochem. Soc., 155, H895 (2008). https://doi.org/10.1149/1.2976213
- O. Maida, A. Asano, M. Takahashi, H. Iwasa and H. Kobayashi, Surf. Sci., 542, 244 (2003). https://doi.org/10.1016/S0039-6028(03)00985-3
- D. R. Lide, CRC Handbook of Chemistry and Physics, 75th ed., p.951, CRC Press, Inc., Boca Raton, USA (1995).
- K. Cheng, J. Lee and J.W. Lyding, Appl. Phys. Lett., 77, 3388 (2000). https://doi.org/10.1063/1.1327277
- N. Fujiwara, Y. L. Li, T. Nakamura, O. Maida, M. Takahashi and H. Kobayashi, Appl. Surf. Sci., 235, 372 (2004). https://doi.org/10.1016/j.apsusc.2004.05.109
- Z. Jin, K. Moulding, H.S. Kwok and M. Wong, IEEE Trans. Electron Devices, 46, 78 (1999). https://doi.org/10.1109/16.737444
- W. B. Kim, T. Matsumoto and H. Kobayashi, Appl. Phys. Lett., 93, 072101 (2008). https://doi.org/10.1063/1.2970040
- J. Ryuta, T. Yoshimi, H. Kondo, H. Okuda and Y. Shimanuki, Jpn. J. Appl. Phys., 31, 2338 (1992). https://doi.org/10.1143/JJAP.31.2338
- F. Edelman, C. Cytermann, R. Brener, M. Eizenberg, Y. L. Khait, R. Weil and W. Beyer, J. Appl. Phys., 75, 7875 (1994). https://doi.org/10.1063/1.356572