한국결정성장학회지 (Journal of the Korean Crystal Growth and Crystal Technology)

  • 제28권4호
  • /
  • Pages.148-151
  • /
  • 2018
  • /
  • 1225-1429(pISSN)
  • /
  • 2234-5078(eISSN)
한국결정성장학회 (The Korea Association of Crystal Growth)
권호 표지
DOI QR코드

DOI QR Code

AlN 단결정 성장에 대한 반복 성장성에 관한 연구

A study on the repeatability of large size of AlN single crystal growth

  • 강승민 (한서대학교 국제디자인융합전문대학원)
  • 투고 : 2018.07.24
  • 심사 : 2018.08.14
  • 발행 : 2018.08.31
PDF 다운로드
⟨ 이전 논문 다음 논문 ⟩

초록

물리기상이동법(Physical Vapor Transport(PVT) method)을 적용하여 질화알루미늄 단결정을 성장하였다. 자체적으로 성장하고 제조한 직경 33 mm 크기의 종자결정을 사용하여 직경 46 mm, 길이 7.6 mm 크기의 벌크단결정을 성장하였으며, 성장 온도는 $1950{\sim}2100^{\circ}C$, 성장 압력은 0.1~1 atm의 범위에서 조절하여 반복 성장을 통하여 성장한 결과를 보고하고자 한다.

A large single crystal of AlN was grown by PVT (Physical Vapor Transport) method. The AlN crystal shaped hexagonal of the diameter of about 46 mm and the thickness of 7.6 mm was grown using 33 mm seed crystal which was grown and made by ourselves. We tried to find out repeatable growth possibility for AlN crystal growth and then to evaluate the repeatability of the growth condition of the temperature of $1950{\sim}2100^{\circ}C$ and the ambient pressure of 0.1~1 atm.

키워드

참고문헌

  1. S.M. Kang, "Growth of AlN crystals by the sublimation process", J. Korean Cryst. Growth Cryst. Technol. 18 (2008) 68.
  2. S.M. Kang, "Morphological study on non-seeded grown AlN single crystals", J. Korean Cryst. Growth Cryst. Technol. 22 (2012) 265. https://doi.org/10.6111/JKCGCT.2012.22.6.265
  3. S.M. Kang, "A study on the growth of AlN single crystals", J. Korean Cryst. Growth Cryst. Technol. 23 (2013) 279. https://doi.org/10.6111/JKCGCT.2013.23.6.279
  4. G.P. Yin and S.M. Kang, "Dependance of hot-zone position on AlN single crystal growth by PVT method", J. Korean Cryst. Growth Cryst. Technol. 26 (2016) 84. https://doi.org/10.6111/JKCGCT.2016.26.2.084
  5. S.M. Kang, "A study on the crystallite growth behavior in AlN crystal grown by PVT (Physical Vapor Transport) method", J. Korean Cryst. Growth Cryst. Technol. 26 (2016) 135. https://doi.org/10.6111/JKCGCT.2016.26.4.135
  6. S.M. Kang, "A study on growing of bulk AlN single crystals grown having a (011) growth face of by PVT method", J. Korean Cryst. Growth Cryst. Technol. 25 (2015) 32. https://doi.org/10.6111/JKCGCT.2015.25.1.032
  7. I. Satoh, S. Arakawa, K. Tanizaki, M. Miyanaga, T. Sakurada, Y. Yamamoto and H. Nakahata, "Development of aluminum nitride single-crystal substrates", SEI Tech. Rev. 71 (2010) 78.
  8. G.A. Slack, "Aluminum Nitride Crystal Growth", Final Report (1979).
  9. X. Gan, Z. Wang, W. Wang, T. Wang, H. Wu and C. Liu, "Growth and characterization of In0.17Al0.83N thin films on lattice-matched GaN by molecular beam epitaxy", Mat. Sci. Semi. Processing 27 (2014) 665. https://doi.org/10.1016/j.mssp.2014.08.014
  10. T. Tahtamouni, J. Li, J. Lin and H. Jiang, "Surfactant effects of gallium on quality of AlN epilayers grown via metal-organic chemical-vapour deposition on SiC substrates", J. Phys. D: Appl. Phys. 45 (2012) 285103. https://doi.org/10.1088/0022-3727/45/28/285103
  11. A. Dahiya, C. Opoku, D. Alquier, G. Vittrant, F. Cayrel, O. Graton, L. Hue and N. Camara, "Controlled growth of 1D and 2D ZnO nanostructures on 4H-SiC using Au catalyst", Nanoscale Res. Lett. 49 (2014) 379.