Abstract
Recently solar cell industry needs the optimal design of Czochralski process for low cost high quality silicon mono crystalline ingot. Because market needs both high efficient solar cell and similar cost with multi-crystalline Si ingot. For cost reduction in Czochralski process, first of all energy reduction should be completed because Czochralski process is high energy consumption process. For this purpose we studied optimal water-cooling tube design and simultaneously we also check the quality of ingot with Von mises stress and V(pull speed of ingot)/G(temperature gradient to the crystallization) values. At this research we used $CG-Sim^{(R)}$ S/W package and finally we got improved water-cooling tube design than normally used process in present industry. The optimal water-cooling tube length should be 200mm. The result will be adopted at real industry.