전기학회논문지 (The Transactions of The Korean Institute of Electrical Engineers)

  • 제67권6호
  • /
  • Pages.799-803
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  • 2018
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  • 1975-8359(pISSN)
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  • 2287-4364(eISSN)
대한전기학회 (The Korean Institute of Electrical Engineers)
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엘라스토머 기판 상에 제작한 유기 강유전체 메모리 소자의 전기적 특성

Electrical Characteristics of Organic Ferroelectric Memory Devices Fabricated on Elastomeric Substrate

  • Jung, Soon-Won (Division of Energy & Optical Technology Convergence, Cheongju University) ;
  • Ryu, Bong-Jo (Dept. of Mechanical Engineering, Hanbat University) ;
  • Koo, Kyung-Wan (Dept. of ICT Automotive Engineering, Hoseo University)
  • 투고 : 2018.04.24
  • 심사 : 2018.05.16
  • 발행 : 2018.06.01
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초록

We demonstrated memory thin-film transistors (MTFTs) with organic ferroelectric polymer poly(vinylidene fluoride-co-trifluoroethylene) and an amorphous oxide semiconducting indium gallium zinc oxide channel on the elastomeric substrate. The dielectric constant for the P(VDF-TrFE) thin film prepared on the elastomeric substrate was calculated to be 10 at a high frequency of 1 MHz. The voltage-dependent capacitance variations showed typical butterfly-shaped hysteresis behaviors owing to the polarization reversal in the film. The carrier mobility and memory on/off ratio of the MTFTs showed $15cm^2V^{-1}s^{-1}$ and $10^6$, respectively. This result indicates that the P(VDF-TrFE) film prepared on the elastomeric substrate exhibits ferroelectric natures. The fabricated MTFTs exhibited sufficiently encouraging device characteristics even on the elastomeric substrate to realize mechanically stretchable nonvolatile memory devices.

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참고문헌

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