다이아몬드 반도체 연구동향

  • 이지형 (북텍사스대학교 재료공학과) ;
  • 하민우 (명지대학교 전기공학과)
  • 발행 : 2018.06.01

초록

키워드

참고문헌

  1. 우현민, 안중영, 이명준, 나재두, "차세대 전력반도체 SiC와 GaN의 응용", 대한전기학회 전기의 세계, 2014. 5.
  2. 이일운, 김종우, "전력전자분야에서 GaN 전력반도체를 위한 회로기술 연구동향", 대한전기학회 전기의 세계, 2016. 2.
  3. 장해녕, 강동원, 하민우, "필드 플레이트가 설계된 다이아몬드 쇼트키 장벽 다이오드", 전기학회논문지, 2017. 4.
  4. D.-W. Kang, H. N. CHang, and M.-W. Ha, "Numerical simulation of p-type diamond Schottky barrier diodes for high breakdown voltage", Jpn. J. Appl. Phys., 2017
  5. C. J. H. Wort and R. S. Balmer, "Diamond as an electronic material", Mater. Today, 2008
  6. S. Shikata, "Single crystal diamond wafers for high power electronics", Diamond & Related Materials, 2016
  7. S. Matsumoto, Y. Sato, M. Kamo, N. Setaka, "Vapor deposition of diamond particles from methane", Jpn. J. Appl. Phys., 1982
  8. S. Matsumoto, Y. Sato, M. Tsutsumi, N. Setaka, "Growth of diamond particles from methane-hydrogen gas", J. Mater. Sci., 1982
  9. N. G. Shang, F. C. K. Au, X. M. Meng, C. S. Lee, I. Bello, and S. T. Lee, "Uniform carbon nanoflake films and their field emissions", Chem. Phys. Lett., 2002
  10. J. Asmussen and D. K. Reinhard, "Diamond films handbook", Marcel Dekker, Inc., New York, 2002
  11. M. Hiramatsu, C. H. Lau, A. Bennett, and J. S. Foord, "Formation of diamond and naocrystalline diamond films by microwave plasma CVD", Thin Solid Films, 2002
  12. T. Masuda, M. Kimura, M. Hiramatsu, and M. Hori, "Carbon nanotube and nanowall formations employing non-equilibrium atmospheric pressure plasma CVD", 28th Int. Proc. Symp. Dry Process, 2006
  13. H. Kawada, "High-current metal oxide semiconductor field-effect transistors on H-terminated diamond surfaces and their high-frequency operation", Jpn. J. Appl. Phys., 2012
  14. K. Hirama, H. Sato, Y. Haradam H. Yamamoto, and M. Kasu, "Diamond field-effect transistors with 1.3 A/mm drain current density by $Al_2O_3$ passivation layer", Jpn. J. Appl. Phys., 2012
  15. D. Takeuchi, T. Makino, H. Kato, M. Ogura, H. Okushi, H. Ohashi, and S. Yamasaki, "High-voltage vacuum switch with a diamond p-i-n diode using negative electron affinity", Jpn. J. Appl. Phys., 2012
  16. K. Hirama, Y. Taniyasu, and M. Kasu, "Epitaxial growth of AlGaN/GaN high-electron mobility transistor structure on diamond (111) surface", Jpn. J. Appl. Phys., 2012
  17. M. Liao, L. Sang, T. Teraji, M. Imura, J. Alvarez, and T. Koide, "Comprehensive investigation of single crystal diamond deep-ultraviolet detectors", Jpn. J. Appl. Phys., 2012