참고문헌
- 우현민, 안중영, 이명준, 나재두, "차세대 전력반도체 SiC와 GaN의 응용", 대한전기학회 전기의 세계, 2014. 5.
- 이일운, 김종우, "전력전자분야에서 GaN 전력반도체를 위한 회로기술 연구동향", 대한전기학회 전기의 세계, 2016. 2.
- 장해녕, 강동원, 하민우, "필드 플레이트가 설계된 다이아몬드 쇼트키 장벽 다이오드", 전기학회논문지, 2017. 4.
- D.-W. Kang, H. N. CHang, and M.-W. Ha, "Numerical simulation of p-type diamond Schottky barrier diodes for high breakdown voltage", Jpn. J. Appl. Phys., 2017
- C. J. H. Wort and R. S. Balmer, "Diamond as an electronic material", Mater. Today, 2008
- S. Shikata, "Single crystal diamond wafers for high power electronics", Diamond & Related Materials, 2016
- S. Matsumoto, Y. Sato, M. Kamo, N. Setaka, "Vapor deposition of diamond particles from methane", Jpn. J. Appl. Phys., 1982
- S. Matsumoto, Y. Sato, M. Tsutsumi, N. Setaka, "Growth of diamond particles from methane-hydrogen gas", J. Mater. Sci., 1982
- N. G. Shang, F. C. K. Au, X. M. Meng, C. S. Lee, I. Bello, and S. T. Lee, "Uniform carbon nanoflake films and their field emissions", Chem. Phys. Lett., 2002
- J. Asmussen and D. K. Reinhard, "Diamond films handbook", Marcel Dekker, Inc., New York, 2002
- M. Hiramatsu, C. H. Lau, A. Bennett, and J. S. Foord, "Formation of diamond and naocrystalline diamond films by microwave plasma CVD", Thin Solid Films, 2002
- T. Masuda, M. Kimura, M. Hiramatsu, and M. Hori, "Carbon nanotube and nanowall formations employing non-equilibrium atmospheric pressure plasma CVD", 28th Int. Proc. Symp. Dry Process, 2006
- H. Kawada, "High-current metal oxide semiconductor field-effect transistors on H-terminated diamond surfaces and their high-frequency operation", Jpn. J. Appl. Phys., 2012
-
K. Hirama, H. Sato, Y. Haradam H. Yamamoto, and M. Kasu, "Diamond field-effect transistors with 1.3 A/mm drain current density by
$Al_2O_3$ passivation layer", Jpn. J. Appl. Phys., 2012 - D. Takeuchi, T. Makino, H. Kato, M. Ogura, H. Okushi, H. Ohashi, and S. Yamasaki, "High-voltage vacuum switch with a diamond p-i-n diode using negative electron affinity", Jpn. J. Appl. Phys., 2012
- K. Hirama, Y. Taniyasu, and M. Kasu, "Epitaxial growth of AlGaN/GaN high-electron mobility transistor structure on diamond (111) surface", Jpn. J. Appl. Phys., 2012
- M. Liao, L. Sang, T. Teraji, M. Imura, J. Alvarez, and T. Koide, "Comprehensive investigation of single crystal diamond deep-ultraviolet detectors", Jpn. J. Appl. Phys., 2012