Applied Science and Convergence Technology

한국진공학회 (The Korean Vacuum Society)
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Temperature-dependent Luminescence Properties of Digital-alloy In(Ga1-zAlz)As

  • Cho, Il-Wook (Department of Physics, Kangwon National University) ;
  • Ryu, Mee-Yi (Department of Physics, Kangwon National University) ;
  • Song, Jin Dong (Center for Opto-Electronic Convergence Systems, Korea Institute of Science and Technology)
  • 투고 : 2018.05.30
  • 심사 : 2018.06.01
  • 발행 : 2018.05.30
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초록

The optical properties of the digital-alloy $(In_{0.53}Ga_{0.47}As)_{1-z}/(In_{0.52}Al_{0.48}As)_z$ grown by molecular beam epitaxy as a function of composition z (z = 0.4, 0.6, and 0.8) have been studied using temperature-dependent photoluminescence (PL) and time-resolved PL (TRPL) spectroscopy. As the composition z increases from 0.4 to 0.8, the PL peak energy of the digital-alloy $In(Ga_{1-z}Al_z)As$ is blueshifted, which is explained by the enhanced quantization energy due to the reduced well width. The decrease in the PL intensity and the broaden FWHM with increasing z are interpreted as being due to the increased Al contents in the digital-alloy $In(Ga_{1-z}Al_z)As$ because of the intermixing of Ga and Al in interface of InGaAs well and InAlAs barrier. The PL decay time at 10 K decreases with increasing z, which can be explained by the easier carrier escape from InGaAs wells due to the enhanced quantized energies because of the decreased InGaAs well width as z increases. The emission energy and luminescence properties of the digitalalloy $(InGaAs)_{1-z}/(InAlAs)_z$ can be controlled by adjusting composition z.

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참고문헌

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