한국표면공학회지 (Journal of the Korean institute of surface engineering)

  • 제51권2호
  • /
  • Pages.110-115
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  • 2018
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  • 1225-8024(pISSN)
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  • 2288-8403(eISSN)
한국표면공학회 (The Korean Institute of Surface Engineering)
권호 표지
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SIMS를 이용한 SiO2/PSG/SiO2/Al-1%Si 및 SiO2/TEOS/SiO2/Al-1%Si 적층 박막내의 Na 게터링 분석

Analysis of the Na Gettering in SiO2/PSG/SiO2/Al-1%Si and SiO2/TEOS/SiO2/Al-1%Si Multilevel Thin Films using SIMS

  • 김진영 (광운대학교 전자재료공학과)
  • Kim, Jin Young (Department of Electronic Materials Engineering, Kwangwoon University)
  • 투고 : 2018.03.09
  • 심사 : 2018.04.02
  • 발행 : 2018.04.30
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초록

The Na low temperature gettering in $SiO_2/PSG/SiO_2/Al-1%Si$ and $SiO_2/TEOS/SiO_2/Al-1%Si$ multilevel thin films was investigated using dynamic SIMS(secondary ion mass spectrometry) analysis. DC magnetron sputter, APCVD and PECVD techniques were utilized for the deposition of Al-1%Si thin films, $SiO_2/PSG/SiO_2$ and $SiO_2/TEOS/SiO_2$ passivations, respectively. Heat treatment was carried out at $300^{\circ}C$ for 5 h in air. SIMS depth profiling was used to determine the distribution of Na, Al, Si and other elements throughout the $SiO_2/PSG/SiO_2/Al-1%Si$ and $SiO_2/TEOS/SiO_2/Al-1%Si$ multilevel thin films. XPS was used to analyze chemical states of Si and O elements in $SiO_2$ passivation layers. Na peaks were observed throughout the $PSG/SiO_2$ and $TEOS/SiO_2$ passivation layers on the Al-1%Si thin films and especially at the interfaces. Na low temperature gettering in $SiO_2/PSG/SiO_2/Al-1%Si$ and $SiO_2/TEOS/SiO_2/Al-1%Si$ multilevel thin films is considered to be caused by a segregation type of gettering.

키워드

참고문헌

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