Journal of electromagnetic engineering and science

  • 제18권2호
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  • Pages.141-143
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  • 2018
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  • 2671-7255(pISSN)
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  • 2671-7263(eISSN)
한국전자파학회 (The Korean Institute of Electromagnetic Engineering and Science)
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Comparison of Two Layout Options for 110-GHz CMOS LC Cross-Coupled Oscillators

  • Kim, Doyoon (School of Electrical Engineering, Korea University) ;
  • Rieh, Jae-Sung (School of Electrical Engineering, Korea University)
  • 투고 : 2017.12.01
  • 심사 : 2018.01.30
  • 발행 : 2018.04.30
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초록

Two 110-GHz oscillators have been developed in 65-nm CMOS technology. To study the effect of layout on the circuit performance, both oscillators had the same LC cross-coupled topology but different layout schemes of the circuit. The oscillator with the conventional cross-coupled design (OSC1), showed an output power of -3.9 dBm at 111 GHz with a phase noise of -75 dBc/Hz at 1-MHz offset. On the other hand, OSC2, with a modified cross-coupled line layout, generated an output power of -2.0 dBm at 117 GHz with a phase noise of -77 dBc/Hz at 1-MHz offset. The result indicates that the optimized layout can improve key oscillator performances such as oscillation frequency and output power.

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참고문헌

  1. D. Yoon, J. Kim, J. Yun, M. Kaynak, B. Tillack, and J. S. Rieh, "300-GHz direct and heterodyne active imagers based on $0.13-{\mu}m$ SiGe HBT technology," IEEE Transactions on Terahertz Science and Technology, vol. 7, no. 5, pp. 536-545, 2017. https://doi.org/10.1109/TTHZ.2017.2715419
  2. J. Yoo and J. S. Rieh, "CMOS 120 GHz phase-locked loops based on two different VCO topologies," Journal of Electromagnetic Engineering and Science, vol. 17, no. 2, pp. 98-104, 2017. https://doi.org/10.5515/JKIEES.2017.17.2.98
  3. C. T. Coen, A. C. Ulusoy, P. Song, A. Ildefonso, M. Kaynak, B. Tillack, and J. D. Cressler, "Design and on-wafer characterization of G-band SiGe HBT low-noise amplifiers," IEEE Transactions on Microwave Theory and Techniques, vol. 64, no. 11, pp. 3631-3642, 2016. https://doi.org/10.1109/TMTT.2016.2608773
  4. J. Yun, D. Yoon, H. Kim and J. S. Rieh, "300-GHz InP HBT oscillators based on common-base cross-coupled topology," IEEE Transactions on Microwave Theory and Techniques, vol. 62, no. 12, pp. 3053-3064, 2014. https://doi.org/10.1109/TMTT.2014.2364608

피인용 문헌

  1. Design of Experiment (DOE) Analysis of System Level ESD Noise Coupling to High-Speed Memory Modules vol.8, pp.2, 2019, https://doi.org/10.3390/electronics8020210
  2. D-Band Frequency Tripler Module Using Anti-Parallel Diode Pair and Waveguide Transitions vol.9, pp.8, 2020, https://doi.org/10.3390/electronics9081201