참고문헌
-
M. Higashiwaki, H. Murakami, Y. Kumagai and A. Kuramata, "Current status of
$Ga_2O_3$ power devices", Jpn. J. Appl. Phys. 55 (2016) 1202A1. https://doi.org/10.7567/JJAP.55.1202A1 - H.Y. Playford, A.C. Hannon, E.R. Barney and R.I. Walton, "Structures of uncharacterised polymorphs of gallium oxide from total neutron diffraction", Chem. Eur. J. 19 (2013) 2803. https://doi.org/10.1002/chem.201203359
-
M. Higashiwaki, K. Sasaki, A. Kuramata, T. Masui and S. Yamakoshi, "Gallium oxide (
$Ga_2O_3$ ) metal-semiconductor field-effect transistors on single-crystal${\beta}-Ga_2O_3$ (010) substrates", Appl. Phys. Lett. 100 (2012) 013504. https://doi.org/10.1063/1.3674287 -
K. Sasaki, A. Kuramata, T. Masui and E.G. Víllora, "Device-quality
${\beta}-Ga_2O_3$ epitaxial films fabricated by ozone molecular beam epitaxy", Appl. Phys. Express. 5 (2012) 035502. https://doi.org/10.1143/APEX.5.035502 -
G. Pozina, M. Forsberg, M.A. Kaliteevski and C. Hemmingsson, "Emission properties of
$Ga_2O_3$ nano-flakes: effect of excitation density", Sci. Rep. 7 (2017) 42132. https://doi.org/10.1038/srep42132 - B.G. Svensson, S.J. Pearton and C. Jagadish, "Oxide semiconductors", fourth ed. (Academic Press, Cambridge, 2013), 360 p.
-
X. Feng, Z. Li, W. Mi, Y. Luo and J. Ma, "Mg-doped
${\beta}-Ga_2O_3$ films with tunable optical band gap prepared on MgO (110) substrates by metal-organic chemical vapor deposition", Mater. Sci. Semicond. Process. 34 (2015) 52. https://doi.org/10.1016/j.mssp.2015.01.001 -
P.C. Chang, Z. Fan, W.Y. Tseng, A. Rajagopal and J.G. Lu, "
${\beta}-Ga_2O_3$ nanowires: Synthesis, characterization, and p-channel field-effect transistor", Appl. Phys. Lett. 87 (2005) 222102. https://doi.org/10.1063/1.2135867 -
K. Akaiwa, K. Kaneko, K. Ichino and S. Fujita, "Conductivity control of Sn-doped
${\alpha}-Ga_2O_3$ thin films grown on sapphire substrates", Jpn. J. Appl. Phys. 55 (2016) 1202BA. https://doi.org/10.7567/JJAP.55.1202BA -
C.H. Ho, C.Y. Tseng and L.C. Tien, "Thermoreflectance characterization of
${\beta}-Ga_2O_3$ thin-film nanostrips", Opt. Express. 18 (2010) 16360. https://doi.org/10.1364/OE.18.016360 -
Y.P. Song, H.Z. Zhang, C. Lin, Y.W. Zhu, G.H. Li, F.H. Yang and D.P. Yu, "Luminescence emission originating from nitrogen doping of
${\beta}-Ga_2O_3$ nanowires", Phys. Rev. B. 69 (2004). - S. Fischer, C. Wetzel, E.E. Haller and B.K. Meyer, "On p-type doping in GaN-acceptor binding energies", Appl. Phys. Lett. 67 (1995) 1298. https://doi.org/10.1063/1.114403
-
L. Dong, R. Jia, B. Xin, B. Peng and Y. Zhang, "Effects of oxygen vacancies on the structural and optical properties of
${\beta}-Ga_2O_3$ ", Sci. Rep. 7 (2017) 40160. https://doi.org/10.1038/srep40160 -
P. Ravadgar, R.H. Horng and T.Y. Wang, "Healing of surface states and point defects of single-crystal
${\beta}-Ga_2O_3$ epilayers", ECS J. Solid State Sci. Technol. 1 (2012) N58. https://doi.org/10.1149/2.012204jss - P. Vogt, "Growth kinetics, thermodynamics, and phase formation of group-III and IV oxides during molecular beam epitaxy", Ph. D., Berlin: Humboldt University (2017).