DOI QR코드

DOI QR Code

CBD법에 의한 ZnS 박막 성장의 하이드라진 효과

Effect of Hydrazine as a Complex Agent on the Growth of ZnS Thin Film by Using Chemical Bath Deposition (CBD)

  • 이차란 (청주대학교 에너지융합학과) ;
  • 김제하 (청주대학교 에너지융합학과)
  • Lee, Cha Ran (Department of Energy Convergence Engineering, Cheongju University) ;
  • Kim, Jeha (Department of Energy Convergence Engineering, Cheongju University)
  • 투고 : 2017.12.04
  • 심사 : 2017.12.28
  • 발행 : 2018.03.01

초록

We prepared ZnS thin films via chemical bath deposition (CBD) in an aqueous solution of ammonia ($NH_3$) and hydrazine ($N_2H_4$). The composition ratio of hydrazine used was 0%, 17%, 22%, 29%, or 50%. We investigated the effects of hydrazine and ammonia on the growth, and the structural and optical properties of ZnS in terms of surface uniformity, voids, and grain size. We found that during the growth of ZnS films, hydrazine was very effective for improving the surface morphology and layer uniformity with fast layer formation, while it had no effect on the bandgap energy, $E_g$.

키워드

참고문헌

  1. J. M. Hwang, M. O. Oh, I. Kim, J. K. Lee, and C. S. Ha, Curr. Appl. Phys., 5, 31 (2005). [DOI: https://doi.org/10.1016/ j.cap.2003.11.075]
  2. S. H. Deulkar, C. H. Bhosale, and M. Sharon, J. Phys. Chem. Solids, 65, 1879 (2004). [DOI: https://doi.org/10.1016/j.jpcs.2004. 06.012]
  3. L. X. Shao, K. H. Chang, and H. L. Hwang, Appl. Surf. Sci., 212, 305 (2003). [DOI: https://doi.org/10.1016/S0169-4332(03)00085-0]
  4. J. R. Bakke, J. S. King, H. J. Jung, R. Sinclair, and S. F. Bent, Thin Solid Films, 518, 5400 (2010). [DOI: https:// doi.org/10.1016/j.tsf.2010.03.074]
  5. B. Elidrissi, M. Addou, M. Regragui, A. Bougrine, A. Kachouane, and J. C. Bernede, Mater. Chem. Phys., 68, 175 (2001). [DOI: https://doi.org/10.1016/S0254-0584(00)00351-5]
  6. T. B. Nasr, N. Kamoun, M. Kanzari, and R. Bennaceur, Thin Solid Films, 500, 4 (2006). [DOI: https://doi.org/10.1016/j.tsf. 2005.11.030]
  7. H. Ke, S. Duo, T. Liu, Q. Sun, C. Ruan, X. Fei, J. Tan, and S. Zhan, Mater. Sci. Semicond. Process., 18, 28 (2014). [DOI: https://doi.org/10.1016/j.mssp.2013.10.022]
  8. T. M. Hsieh, S. J. Lue, J. Ao, Y. Sun, W. S. Feng, and L. B. Chang, J. Power Sources, 246, 443 (2014). [DOI: https://doi.org/10.1016/j.jpowsour.2013.07.090]
  9. J. Hong, D. Lim, Y. J. Eo, and C. Choi, Appl. Surf. Sci., 432, 250 (2018). [DOI: https://doi.org/10.1016/j.apsusc.2017.09.133]
  10. A. Wei, J. Liu, M. Zhuang, and Y. Zhao, Mater. Sci. Semicond. Process., 16, 1478 (2013). [DOI: https://doi.org/10.1016/j.mssp.2013.03.016]