References
- J. M. Hwang, M. O. Oh, I. Kim, J. K. Lee, and C. S. Ha, Curr. Appl. Phys., 5, 31 (2005). [DOI: https://doi.org/10.1016/ j.cap.2003.11.075]
- S. H. Deulkar, C. H. Bhosale, and M. Sharon, J. Phys. Chem. Solids, 65, 1879 (2004). [DOI: https://doi.org/10.1016/j.jpcs.2004. 06.012]
- L. X. Shao, K. H. Chang, and H. L. Hwang, Appl. Surf. Sci., 212, 305 (2003). [DOI: https://doi.org/10.1016/S0169-4332(03)00085-0]
- J. R. Bakke, J. S. King, H. J. Jung, R. Sinclair, and S. F. Bent, Thin Solid Films, 518, 5400 (2010). [DOI: https:// doi.org/10.1016/j.tsf.2010.03.074]
- B. Elidrissi, M. Addou, M. Regragui, A. Bougrine, A. Kachouane, and J. C. Bernede, Mater. Chem. Phys., 68, 175 (2001). [DOI: https://doi.org/10.1016/S0254-0584(00)00351-5]
- T. B. Nasr, N. Kamoun, M. Kanzari, and R. Bennaceur, Thin Solid Films, 500, 4 (2006). [DOI: https://doi.org/10.1016/j.tsf. 2005.11.030]
- H. Ke, S. Duo, T. Liu, Q. Sun, C. Ruan, X. Fei, J. Tan, and S. Zhan, Mater. Sci. Semicond. Process., 18, 28 (2014). [DOI: https://doi.org/10.1016/j.mssp.2013.10.022]
- T. M. Hsieh, S. J. Lue, J. Ao, Y. Sun, W. S. Feng, and L. B. Chang, J. Power Sources, 246, 443 (2014). [DOI: https://doi.org/10.1016/j.jpowsour.2013.07.090]
- J. Hong, D. Lim, Y. J. Eo, and C. Choi, Appl. Surf. Sci., 432, 250 (2018). [DOI: https://doi.org/10.1016/j.apsusc.2017.09.133]
- A. Wei, J. Liu, M. Zhuang, and Y. Zhao, Mater. Sci. Semicond. Process., 16, 1478 (2013). [DOI: https://doi.org/10.1016/j.mssp.2013.03.016]