전기전자학회논문지 (Journal of IKEEE)

  • 제22권1호
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  • Pages.74-79
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  • 2018
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  • 1226-7244(pISSN)
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  • 2288-243X(eISSN)
한국전기전자학회 (Institute of Korean Electrical and Electronics Engineers)
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무접합 원통형 및 이중게이트 MOSFET에서 중심전위와 문턱전압이하 스윙 분석

Analysis of Center Potential and Subthreshold Swing in Junctionless Cylindrical Surrounding Gate and Doube Gate MOSFET

  • Jung, Hakkee (Dept. of Electronic Engineering, Kunsan National University)
  • 투고 : 2018.03.08
  • 심사 : 2018.03.14
  • 발행 : 2018.03.31
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초록

본 논문에서는 무접합 원통형과 무접합 이중게이트 MOSFET의 중심전위와 문턱전압이하 스윙의 관계를 분석하였다. 해석학적 전위분포를 이용하여 문턱전압이하 스윙을 구하고 중심전위와 문턱전압이하 스윙을 채널크기 변화에 따라 비교 고찰하였다. 결과적으로 중심전위분포의 변화가 직접적으로 문턱전압이하 스윙에 영향을 미치고 있다는 것을 관찰하였다. 채널두께나 산화막 두께가 증가할수록 문턱전압이하 스윙은 증가하였으며 JLDG 구조가 더욱 민감하게 증가하였다. 그러므로 나노구조 MOSFET의 단채널효과를 감소시키기 위하여 JLCSG 구조가 더욱 효과적이라는 것을 알 수 있었다.

We analyzed the relationship between center potential and subthreshold swing (SS) of Junctionless Cylindrical Surrounding Gate (JLCSG) and Junctionless Double Gate (JLDG) MOSFET. The SS was obtained using the analytical potential distribution and the center potential, and SSs were compared and investigated according to the change of channel dimension. As a result, we observed that the change in central potential distribution directly affects the SS. As the channel thickness and oxide thickness increased, the SS increased more sensitively in JLDG. Therefore, it was found that JLCSG structure is more effective to reduce the short channel effect of the nano MOSFET.

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참고문헌

  1. I. Ferain, C. A. Colinge and J. Colinge ,"Multigate transistor as the future of classical metal-oxide-semiconductor field-effect transistors," Nature, vol. 479, pp. 310-316, 2011.DOI:10.1038/nature10676
  2. E. Gnani, A. Gnudi, S. Reggiani and G. Baccarani, "Theory of the Junctionless Nanowire FET," IEEE Trans. on Electron Devices, vol.58, no. 9, pp. 2903-2910, 2011.DOI: 10.1109/TED.2011.2159608
  3. X. Jin, X. Liu, M. Wu, R. Chuai, J. H. Lee and J. H. Lee, "Modelling of the nanoscale channel length effect on the subthreshold characteristics of junctionless field-effect transistors with a symmetric double-gate structure," Journal of Physics D: Applied Physics, vol. 45, no. 37, pp.1-5, 2012.DOI:10.1088/0022-3727/45/37/375102
  4. C. Li, Y. Zhu ang, S. Di and R. Han, "Subthreshold Behavior Models for Nanoscale Short-Channel Junctionless Cylindrical Surrounding-Gate MOSFETs," IEEE Trans. on Electron Devices, vol. 60, no. 11, pp. 3655-3662, 2013.DOI:10.1109/TED.2013.2281395
  5. C. Jiang, R. Liang, J. Wang and J. Xu, "A two-dimensional analytical model for short channel junctionless double-gate MOSFETs," AIP Advances, vol. 5, no. 5, pp. 057122-1-13, 2015.DOI:10.1063/1.4921086
  6. N. Trivedi, M. Kumar, S. Haldar, S. Deswal, M. Gupta and R. S. Gupta, "Analytical modeling of Junctionless Accumulation Mode Cylindrical Surrounding Gate MOSFET (JAM-CSG)," Int. J . of Numer. Model., vol. 29, no.6, pp. 1036-1043, 2016.DOI: 10.1002/jnm.2162
  7. G. Hu, P. Xiang, Z. Ding, R. Liu, L. Wang and T. A. Tang, "Analytical Models for Electrical Potential, Threshold Voltage, and Subthreshold Swing of Junctionless Surrounding-Gate Transistors," IEEE Trans. on Electron Devices , vol. 61, no. 3, pp.688-695, March 2014.DOI: 10.1109/TED.2013.2297378
  8. S. H. Oh, D. Monroe and J. M. Hergenrother, "Analytical Description of Short-Channel Effects in Fully-Depleted Double-Gate and Cylindrical, Surrounding-Gate MOSFETs," IEEE Electron Device Letters, vol. 21, no. 9, pp.445-447, 2000.DOI: 10.1109/55.863106