Y. M. Chiang, D. P. Birnie, and W. D. Kingery, Physical Ceramics. (Wiley, New York, 1997).
M. M. Atalla, E. Tannenbaum, and E. J. Scheibner, "Stabilization of Silicon Surfaces by Thermally Grown Oxides," Bell Syst. Tech. J., vol. 38, no. 3, pp. 749-783, 1959.https://doi.org/10.1002/j.1538-7305.1959.tb03907.x
R. H. Dennard, "Field-Effect Transistor Memory," US Patent 3,387,286 (1968).
D. Kang et al., "256 Gb 3 b/Cell V-NAND Flash Memory With 48 Stacked WL Layers," IEEE J. Solid-State Circuits, vol. 52, no. 1, pp. 210-217, 2017.https://doi.org/10.1109/JSSC.2016.2604297
S. Hong, O. Auciello, and D. Wouters, Emerging non-volatile memories. New York: Springer, 2014.
S. Hong, S. M. Nakhmanson, and D. D. Fong, "Screening mechanisms at polar oxide heterointerfaces," Reports on Progress in Physics, vol. 79. 076501, 2016.https://doi.org/10.1088/0034-4885/79/7/076501
S. V. Kalinin, B. G. Sumpter, and R. K. Archibald, "Big-deep-smart data in imaging for guiding materials design," Nat. Mater., vol. 14, no. 10, pp. 973-980, 2015.https://doi.org/10.1038/nmat4395
H. Ko et al., "High-resolution field effect sensing of ferroelectric charges," Nano Lett., vol. 11, no. 4, pp. 1428-1433, 2011.https://doi.org/10.1021/nl103372a
S. H. Chang et al., "X-ray Irradiation Induced Reversible Resistance Change in Pt/$TiO_2$/Pt Cells," ACS Nano, vol. 8, no. 2, pp. 1584-1589, 2014.https://doi.org/10.1021/nn405867p
S. Hong et al., "Principle of ferroelectric domain imaging using atomic force microscope," J. Appl. Phys., vol. 89, no. 2, pp. 1377-1386, 2001.https://doi.org/10.1063/1.1331654
H. Kim, S. Hong, and D. W. Kim, "Ambient effects on electric-field-induced local charge modification of $TiO_2$," Appl. Phys. Lett., vol. 100, 022901, 2012.https://doi.org/10.1063/1.3675630
H. Park, J. Jung, D. K. Min, S. Kim, S. Hong, and H. Shin, "Scanning resistive probe microscopy: Imaging ferroelectric domains," Appl. Phys. Lett., vol. 84, no. 10, pp. 1734-1736, 2004.https://doi.org/10.1063/1.1667266
S. Hong, S. Tong, W. I. Park, Y. Hiranaga, Y. Cho, and A. Roelofs, "Charge gradient microscopy," Proc. Natl. Acad. Sci., vol. 111, no. 18, pp. 6566-6569, 2014.https://doi.org/10.1073/pnas.1324178111
S. Kim, K. No, and S. Hong, "Visualization of ion transport in Nafion using electrochemical strain microscopy," Chem. Commun., vol. 52, no. 4, pp. 831-834, 2016.https://doi.org/10.1039/C5CC07412F
C. Kittel, Introduction to Solid State Physics. (Wiley, New York, 2010).
B. G. Streetman and S. K. Banerjee, Solid State Electronic Devices. (Pearson Prentice Hall, 2006).
R. Feynman, R. Leighton, M. Sands, and S. Treiman, The Feynman lectures on physics - Mainly Electromagnetism and Matter. 1964.
K. A. Mauritz, "Permittivity," Wikipedia, 2018. [Online]. Available: https://en.wikipedia.org/wiki/Permittivity.
S. Tong, I. W. Jung, Y. Y. Choi, S. Hong, and A. Roelofs, "Imaging Ferroelectric Domains and Domain Walls Using Charge Gradient Microscopy: Role of Screening Charges," ACS Nano, vol. 10, no. 2, 2568-2574 (2016).https://doi.org/10.1021/acsnano.5b07551
A. Gomez, M. Gich, A. Carretero-Genevrier, T. Puig, and X. Obradors, "Piezo-generated charge mapping revealed through direct piezoelectric force microscopy," Nat. Commun., vol. 8, 1113 (2017).https://doi.org/10.1038/s41467-017-01361-2
S. O. Hruszkewycz et al., "Imaging local polarization in ferroelectric thin films by coherent X-ray bragg projection ptychography," Phys. Rev. Lett., vol. 110, 177601 (2013).https://doi.org/10.1103/PhysRevLett.110.177601
S. Hong et al., "Nanoscale piezoresponse studies of ferroelectric domains in epitaxial $BiFeO_3$ nanostructures," J. Appl. Phys., vol. 105, 061619 (2009).https://doi.org/10.1063/1.3055412
S. Hong et al., "Effect of metal-insulator-semiconductor structure derived space charge field on the tip vibration signal in electrostatic force microscopy," J. Vac. Sci. Technol. B Microelectron. Nanom. Struct., vol. 18, no. 6, 2688 (2000).https://doi.org/10.1116/1.1323968
S. Tong, W. I. Park, Y. Y. Choi, L. Stan, S. Hong, and A. Roelofs, "Mechanical removal and rescreening of local screening charges at ferroelectric surfaces," Phys. Rev. Appl., vol. 3, 014003 (2015).https://doi.org/10.1103/PhysRevApplied.3.014003
Y. Y. Choi, S. Tong, S. Ducharme, A. Roelofs, and S. Hong, "Charge collection kinetics on ferroelectric polymer surface using charge gradient microscopy," Sci. Rep., vol. 6, 25087 (2016).https://doi.org/10.1038/srep25087
S. Hong et al., "High resolution study of domain nucleation and growth during polarization switching in Pb$(Zr,Ti)O_3$ ferroelectric thin film capacitors," J. Appl. Phys., vol. 86, no. 1, 607 (1999).https://doi.org/10.1063/1.370774
S. Hong and N. Setter, "Evidence for forward domain growth being rate-limiting step in polarization switching in<111>- oriented - $Pb(Zr_{0.45}Ti_{0.55})O_3$ thin-film capacitors," Appl. Phys. Lett., vol. 81, no. 18, 3437 (2002).https://doi.org/10.1063/1.1517396
Y. Kim et al., "Effect of local surface potential distribution on its relaxation in polycrystalline ferroelectric films," J. Appl. Phys., vol. 107, 054103 (2010).https://doi.org/10.1063/1.3290953
J. Woo, S. Hong, D. K. Min, H. Shin, and K. No, "Effect of domain structure on thermal stability of nanoscale ferroelectric domains," Appl. Phys. Lett., vol. 80, no. 21, 4000 (2002).https://doi.org/10.1063/1.1481537
H. Choi, S. Hong, T. H. Sung, and K. No, "Effects of surface morphology on retention loss of ferroelectric domains in poly(vinylidenefluorideco-trifluoroethylene) thin films," Appl. Phys. Lett., vol. 99, 092905 (2011).https://doi.org/10.1063/1.3632042
H. Paik, Y. Y. Choi, S. Hong, and K. No, "Effect of Ag nanoparticle concentration on the electrical and ferroelectric properties of Ag/P(VDF-TrFE) composite films," Sci. Rep., vol. 5, 13209 (2015).https://doi.org/10.1038/srep13209
Y. Kim, S. Hong, H. Park, S. H. Kim, D. K. Min, and K. No, "Grain/domain interaction antd its effect on bit formation in ferroelectric films," in Integrated Ferroelectrics, vol. 78, 255 (2006).https://doi.org/10.1080/10584580600660595
Y. Kim et al., "Tip traveling and grain boundary effects in domain formation using piezoelectric force microscopy for probe storage applications," Appl. Phys. Lett., vol. 89, 172909 (2006).https://doi.org/10.1063/1.2370502
I. Stolichnov et al., "Unusual size effect on the polarization patterns in micron-size $Pb(Zr,Ti)O_3$ film capacitors," Appl. Phys. Lett., vol. 80, no. 25, 4804 (2002).https://doi.org/10.1063/1.1489478
Y. Kim et al., "Injection charge assisted polarization reversal in ferroelectric thin films," Appl. Phys. Lett., vol. 90, 072910 (2007).https://doi.org/10.1063/1.2679902
N. Setter et al., "Ferroelectric thin films: Review of materials, properties, and applications," J. Appl. Phys., vol. 100, 051606 (2006).https://doi.org/10.1063/1.2336999
S. Hong and N. Park, Resistive probe storage: Read/write mechanism, in Scanning Probe Microscopy: Electrical and Electromechanical Phenomena at the Nanoscale (Eds: S. Kalinin and A. Gruverman, Springer, New York, 2007), Chapter 4.6.
S. Hong and Y. Kim, Ferroelectric probe storage devices, in Emerging Non-volatile Memories (Eds: S. Hong, O. Auciello, D. Wouters, Springer, New York, 2014), Chapter 7.
J. Woo et al., "Quantitative analysis of the bit sizedependence on the pulse width and pulse voltage in ferroelectric memory devices using atomic force microscopy," J. Vac. Sci. Technol. B Microelectron. Nanom. Struct., vol. 19, no. 3, 818 (2001).https://doi.org/10.1116/1.1364697
J. B. Goodenough and K. S. Park, "The Li-ion rechargeable battery: A perspective," Journal of the American Chemical Society, vol. 135, no. 4. pp. 1167-1176 (2013).https://doi.org/10.1021/ja3091438
D. Kim et al., "Fabrication of vertically aligned ferroelectric polyvinylidene fluoride mesoscale rod arrays," J. Appl. Polym. Sci., vol. 130, no. 6, 3842 (2013).https://doi.org/10.1002/app.39415
R. Agarwal et al., "Room-temperature relaxor ferroelectricity and photovoltaic effects in tin titanate directly deposited on a silicon substrate," Phys. Rev. B, vol. 97, 054109 (2018).https://doi.org/10.1103/PhysRevB.97.054109