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Analysis of Output Characteristics of Lead-free Ribbon based PV Module Using Conductive Paste

전도성 페이스트를 이용한 무연 리본계 PV 모듈의 출력 특성 분석

  • Yoon, Hee-Sang (Graduate School of Energy Science & Technology, Chungnam National University) ;
  • Song, Hyung-Jun (Photovoltaic Laboratory, Korea Institute of Energy Research) ;
  • Go, Seok-Whan (Photovoltaic Laboratory, Korea Institute of Energy Research) ;
  • Ju, Young-Chul (Photovoltaic Laboratory, Korea Institute of Energy Research) ;
  • Chang, Hyo Sik (Graduate School of Energy Science & Technology, Chungnam National University) ;
  • Kang, Gi-Hwan (Photovoltaic Laboratory, Korea Institute of Energy Research)
  • 윤희상 (충남대학교 에너지과학기술대학원) ;
  • 송형준 (한국에너지기술연구원 태양광연구실) ;
  • 고석환 (한국에너지기술연구원 태양광연구실) ;
  • 주영철 (한국에너지기술연구원 태양광연구실) ;
  • 장효식 (충남대학교 에너지과학기술대학원) ;
  • 강기환 (한국에너지기술연구원 태양광연구실)
  • Received : 2017.12.19
  • Accepted : 2018.02.27
  • Published : 2018.02.28

Abstract

Environmentally benign lead-free solder coated ribbon (e. g. SnCu, SnZn, SnBi${\cdots}$) has been intensively studied to interconnect cells without lead mixed ribbon (e. g. SnPb) in the crystalline silicon(c-Si) photovoltaic modules. However, high melting point (> $200^{\circ}C$) of non-lead based solder provokes increased thermo-mechanical stress during its soldering process, which causes early degradation of PV module with it. Hence, we proposed low-temperature conductive paste (CP) based tabbing method for lead-free ribbon. Modules, interconnected by the lead-free solder (SnCu) employing CP approach, exhibits similar output without increased resistivity losses at initial condition, in comparison with traditional high temperature soldering method. Moreover, 400 cycles (2,000 hour) of thermal cycle test reveals that the module integrated by CP approach withstands thermo-mechanical stress. Furthermore, this approach guarantees strong mechanical adhesion (peel strength of ~ 2 N) between cell and lead-free ribbons. Therefore, the CP based tabbing process for lead free ribbons enables to interconnect cells in c-Si PV module, without deteriorating its performance.

Keywords

References

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