반도체디스플레이기술학회지 (Journal of the Semiconductor & Display Technology)

한국반도체디스플레이기술학회 (The Korean Society Of Semiconductor & Display Technology)
권호 표지

InGaAs 위의 NH3 Plasma Passivation을 이용한 ALD HfAlO유전체 계면전하(Dit) 향상

Improved Dit between ALD HfAlO Dielectric and InGaAs Substrate Using NH3 Plasma Passivation

  • 최재성 (극동대학교 과학기술대학 반도체장비공학과)
  • Choi, Jae Sung (Department of Semiconductor Equipment Engineering, Far East University)
  • 투고 : 2018.11.04
  • 심사 : 2018.12.18
  • 발행 : 2018.12.31
PDF 다운로드
⟨ 이전 논문 다음 논문 ⟩

초록

The effect of $NH_3$ plasma passivation on the chemical and electrical characteristics of ALD HfAlO dielectric on the InGaAs substrate was investigated. The results show that $NH_3$ plasma passivation exhibit better electrical & chemical performance such as much lower leakage current, lower density of interface trap(Dit) level, and low unstable interfacial oxide. $NH_3$ plasma passivation can effectively enhance interfacial characteristics. Therefore $NH_3$ plasma passivation improved the HfAlO dielectric performance on the InGaAs substrate.

키워드

참고문헌

  1. Xiongwen Zhang "Thermal Analysis of a Cylindrical Lithi-um-ion Battery," Journal of Electrochemical Acta, Vol. 56, pp. 1246-1255, 2011. https://doi.org/10.1016/j.electacta.2010.10.054
  2. D.J.H.Choi, Y. Mao, J.P. Chang, "Development of hafnium bsed high-k materials," Materials Science and Engineering, pp. 97-136, 2011.
  3. S.Takagi, R. Zhang, S.H.Kim, N. Taoka, M.Yokoyama, J.K. Suh, R. Suzuki, M. Takennaka, "MOS interface and channel engineering for high-mobility Ge/III-V CMOS," IEDM, pp. 505, 2012.
  4. M. Hong, J. Kwo, P. Tsai, Y. Chang, M. Huang, C. Chen, T. Lin, "III-V metal-oxide-semiconductor fieled-effect transistors with high-k dielectrics," Japanese Journal of Applied Physics, Vol. 46, pp. 3167, 2007 https://doi.org/10.1143/JJAP.46.3167
  5. H. Zhao, J. Yum, Y. Chen, J. Lee, "InGaAs n-MOSFETs with ALD $Al_2O_3$, $HfO_2$ and $LaAlO_3$ gate dielectrics," Journal of Vacuum Science and Technology B, Vol. 27, PP.2024, 2009. https://doi.org/10.1116/1.3125284
  6. D.Shahrijerdi, E. Tutuc, S. Banerjee, "Impact of surface chemical treatment on capacitance-voltage characteristics of GaAs metal-oxide-semiconductor capacitors with Al2O3 gate dielectric," Appiled Physics Letters, Vol. 91, PP.063501, https://doi.org/10.1063/1.2764438
  7. H. Tiznado, D. Domiguez, W. de la Cruz, R. Machorro, M. Curiel, G. Soto, "$TiO_2$ and $Al_2O_3$ ultra thin nanolaminates growth by ALD; instrument automation and film characterization," Revista Mexicana de Fisica, Vol. 58, pp. 459-465,