FIG. 1. Heat load, temperature and stress intensity in crystal at wave-locked 878.6 nm and 808 nm.
FIG. 2. Curves of thermal lens focal length of the laser crystal and the pump power at different pump wavelengths.
FIG. 3. The pulse width varies with repetition rate curve.
FIG. 4. The experimental device of dual-end-pumped A-O Q-switched pumped by wavelength-locked 878.6 nm.
FIG. 5. Output power varies with absorb power curve.
FIG. 7. Wavelength-locked 878.6 nm pumping falling edge triggers the waveform corresponding to the control level of the Q switch and the RF timing relationship at 500 kHz.
FIG. 6. Wavelength-locked 878.6 nm pumping Nd:YVO4 laser output power varies with the repetition rate of 100~500 kHz.
FIG. 8. The curve of pulse width of the wavelength-locked 878.6 nm pumped at repetition rate of 100~500 kHz.
FIG. 9. The pulse width diagram of the wavelength-locked 878.6 nm direct pump and 808 nm traditional pump at 500 kHz.
FIG. 10. In the condition of maximum pump power, the intensity distribution of output laser pumped by wavelength-locked 878.6 nm pumping and 808 nm pumping at 500 KHz.
TABLE 1. Parameters used in the LASCAD simulation
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