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High Repetition Wavelength-locked 878.6 nm LD Dual-end-pumped Nd:YVO4 1064 nm Laser

  • Li, Yue (Jilin Key Laboratory of Solid Laser Technology and Application, School of Science, Changchun University of Science and Technology) ;
  • Yu, Yong-Ji (Jilin Key Laboratory of Solid Laser Technology and Application, School of Science, Changchun University of Science and Technology) ;
  • Wang, Yu-Heng (Jilin Key Laboratory of Solid Laser Technology and Application, School of Science, Changchun University of Science and Technology) ;
  • Liu, Hang (Jilin Key Laboratory of Solid Laser Technology and Application, School of Science, Changchun University of Science and Technology) ;
  • Liu, He-Yan (Jilin Key Laboratory of Solid Laser Technology and Application, School of Science, Changchun University of Science and Technology) ;
  • Jin, Guang-Yong (Jilin Key Laboratory of Solid Laser Technology and Application, School of Science, Changchun University of Science and Technology)
  • Received : 2018.08.20
  • Accepted : 2018.10.08
  • Published : 2018.12.25

Abstract

A $Nd:YVO_4$ laser dual-end-pumped by a wavelength-locked 878.6 nm laser diode is presented. At the repetition rate of 500 KHz, the absorbed pump power of 58 W, an output power of 26.1 W at 1064 nm is obtained, corresponding to an optical-optical efficiency of 45%. The pulse width is 44.2 ns. Meanwhile, the effects of traditional 808 nm pumping and 878.6 nm dual-end-pumping on the output laser beam quality and pulse width are compared and analyzed in an experiment.

Keywords

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FIG. 1. Heat load, temperature and stress intensity in crystal at wave-locked 878.6 nm and 808 nm.

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FIG. 2. Curves of thermal lens focal length of the laser crystal and the pump power at different pump wavelengths.

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FIG. 3. The pulse width varies with repetition rate curve.

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FIG. 4. The experimental device of dual-end-pumped A-O Q-switched pumped by wavelength-locked 878.6 nm.

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FIG. 5. Output power varies with absorb power curve.

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FIG. 7. Wavelength-locked 878.6 nm pumping falling edge triggers the waveform corresponding to the control level of the Q switch and the RF timing relationship at 500 kHz.

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FIG. 6. Wavelength-locked 878.6 nm pumping Nd:YVO4 laser output power varies with the repetition rate of 100~500 kHz.

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FIG. 8. The curve of pulse width of the wavelength-locked 878.6 nm pumped at repetition rate of 100~500 kHz.

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FIG. 9. The pulse width diagram of the wavelength-locked 878.6 nm direct pump and 808 nm traditional pump at 500 kHz.

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FIG. 10. In the condition of maximum pump power, the intensity distribution of output laser pumped by wavelength-locked 878.6 nm pumping and 808 nm pumping at 500 KHz.

TABLE 1. Parameters used in the LASCAD simulation

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