참고문헌
- R. W. Johnson, A. Hultqvist, and S. F. Bent, "A Brief Review of Atomic Layer Deposition: from Fundamentals to Applications," Materials Today, 17 [5] 236-46 (2014). https://doi.org/10.1016/j.mattod.2014.04.026
- T. Kaariainen, D. Cameron, M.-L. Kaariainen, and A. Sherman, Atomic Layer Deposition; 2nd ed., pp. 1-31, Scrivener Publishing and Wiely, Beverly, 2013.
- H. B. Profijt, S. E. Potts, M. C. M. van de Sanden, and W. M. M. Kessels, "Plasma-Assisted Atomic Layer Deposition: Basics, Opportunities, and Challenges," J. Vac. Sci. Technol. A, 29 [5] 050801 (2011).
- H. C. M. Knoops, E. Langereis, M. C. M. van de Sanden, and W. M. M. Kessels, "Conformality of Plasma-Assisted ALD: Physical Processes and Modeling," J. Electrochem. Soc., 157 [12] G241-49 (2010). https://doi.org/10.1149/1.3491381
- S. M. George, "Atomic Layer Deposition: An Overview," Chem. Rev., 110 [1] 111-31 (2010). https://doi.org/10.1021/cr900056b
- J.-S. Kim, J.-H. Yang, Y.-C. Jeong, D.-H. Kim, S.-B. Baek, and Y.-C. Kim, "Effect of Amino Ligand Size of Si Precursors on Initial Reaction with an -OH-Terminated Si (001) Surface for Atomic Layer Deposition," Jpn. J. Appl. Phys., 53 [8S3] 08NE04 (2014). https://doi.org/10.7567/JJAP.53.08NE04
- J.-H. Yang, S.-B. Baek, and Y.-C. Kim, "Initial Surface Reaction of Di-Isopropylaminosilane on a Fully Hydroxyl-Terminated Si (001) Surface," J. Nanosci. Nanotechnol., 14 7954-60 (2014). https://doi.org/10.1166/jnn.2014.9474
-
I. Suzuki, C. Dussarrat, and K. Yanagita, "Extra Low-Temperature
$SiO_2$ Deposition Using Aminosilanes," ECS Trans., 3 [15] 119-28 (2007). - S.-B. Baek, D.-H. Kim, and Y.-C. Kim, "Adsorption and Surface Reaction of Bis-Diethylaminosilane as a Si Precursor on an OH-Terminated Si (001) Surface," Appl. Surf. Sci., 258 6341-44 (2012). https://doi.org/10.1016/j.apsusc.2012.03.033
-
B. B. Burton, S. W. Kang, S. W. Rhee, and S. M. George, "
$SiO_2$ Atomic Layer Deposition Using Tris(dimethylamino) silane and Hydrogen Peroxide Studied by in Situ Transmission FTIR Spectroscopy," J. Phys. Chem. C, 113 8249-57 (2009). - Y.-C. Jeong, S.-B. Baek, D.-H. Kim, J.-S. Kim, and Y.-C. Kim, "Initial Reaction of Silicon Precursors with a Varying Number of Dimethylamino Ligands on a Hydroxyl-Terminated Silicon (001) Surface," Appl. Surf. Sci., 280 207-11 (2013). https://doi.org/10.1016/j.apsusc.2013.04.129
- X. Meng, Y.-C. Byun, H. S. Kim, J. S. Lee, A. T. Lucero, L. Cheng, and J. Kim, "Atomic Layer Deposition of Silicon Nitride Thin Films: A Review of Recent Progress, Challenges, and Outlooks," Materials, 9 1-20 (2016).
-
S. Kotamraju, B. Krishnan, G. Melnychuk, and Y. Koshka, "Low-Temperature Homoepitaxial Growth of 4H-SiC with
$CH_3Cl$ and$SiCl_4$ Precursors," J. Crystal Growth, 312 645-50 (2010). https://doi.org/10.1016/j.jcrysgro.2009.12.017 - K. H. Chung, N. Yao, J. Benziger, J. C. Sturm, K. K. Signh, D. Carlson, and S. Kuppuoao, "Ultrahigh Growth Rate of Epitaxial Silicon by Chemical Vapor Deposition at Low Temperature with Neopentasilane," Appl. Phys. Lett., 92 113506 (2008). https://doi.org/10.1063/1.2897325
- R. C. Taylor and B. A. Scott, "Hexachlorodisilane as a Precursor in the LPCVD of Silicon Dioxide and Silicon Oxynitride Films," J. Electrochem. Soc., 136, 2382-85 (1989). https://doi.org/10.1149/1.2097375
-
K. Park, W.-D. Yun, B.-J. Choi, H.-D. Kim, W.-J. Lee, S.-K. Rha, and C.-O. Park, "Growth Studies and Characterization of Silicon Nitride Thin Films Deposited by Alternating Exposures to
$Si_2Cl_6$ and$NH_3$ ," Thin Solid Films, 517 3975-78 (2009). https://doi.org/10.1016/j.tsf.2009.01.118 - G. Kresse and J. Hafner, "Ab initio Molecular Dynamics for Liquid Metals," Phys. Rev. B, 47 558-61 (1993). https://doi.org/10.1103/PhysRevB.47.558
- G. Kresse, Ab initio Molekular Dynamik fur flussige Metalle, in PhD Thesis, Technische Universitat Wien, Wien, 1993.
- G. Kresse and J. Furthmuller, "Efficiency of ab-initio Total Energy Calculations for Metals and Semiconductors Using a Plane-Wave Basis Set," Comput. Mater. Sci., 6 [1] 15-50 (1996). https://doi.org/10.1016/0927-0256(96)00008-0
- G. Kresse and J. Furthmuller, "Efficient Iterative Schemes for ab initio Total-Energy Calculations Using a Plane-Wave Basis Set," Phys. Rev. B, 54 [16] 11169-86 (1996). https://doi.org/10.1103/PhysRevB.54.11169
- P. E. Blochl, "Projector Augmented-Wave Method," Phys. Rev. B, 50 [24] 17953-79 (1994). https://doi.org/10.1103/PhysRevB.50.17953
- G. Kresse and D. Joubert, "From Ultrasoft Pseudopotentials to the Projector Augmented-Wave Method," Phys. Rev. B, 59 [3] 1758-75 (1999).
- J. P. Perdew, K. Burke, and M. Ernzerhof, "Generalized Gradient Approximation Made Simple," Phys. Rev. Lett., 77 [18] 3865-68 (1996). https://doi.org/10.1103/PhysRevLett.77.3865
- S. Grimme, "Semiempirical GGA-Type Density Functional Constructed with a Long-Range Dispersion Correction," J. Comput. Chem., 27 1787-99 (2006). https://doi.org/10.1002/jcc.20495
- G. Henkelman and H. Jonsson, "A Climbing Image Nudged Elastic Band Method for Finding Saddle Points and Minimum Energy Paths," J. Chem. Phys., 113 [22] 9901-4 (2000). https://doi.org/10.1063/1.1329672
- J. Shen, K. Muthukumar, H. O. Jeschke, and R. Valenti, "Physisorption of an Organometallic Platinum Complex on Silica: An ab initio Study," New J. Phys., 14 073040 (2012). https://doi.org/10.1088/1367-2630/14/7/073040
- T. L. Cottrell, The Strengths of Chemical Bonds, 2nd ed., pp. 272-83, Butterworths, London, 1958.
-
D. A. Keen and M. T. Dove, "Local Structures of Amorphous and Crystalline Phases of Silica,
$SiO_2$ , by Neutron Total Scattering," J. Phys.: Condens. Matter., 11 [47] 9263-73 (1999). https://doi.org/10.1088/0953-8984/11/47/311 -
R. A. Wind and S. M. George, "Quartz Crystal Microbalance Studies of
$Al_2O_3$ Atomic Layer Deposition Using Trimethylaluminum and Water at$125^{\circ}C$ ", J. Phys. Chem. A, 114 [3] 1281 (2010). https://doi.org/10.1021/jp9049268 - H. J. W. Muller-Kirsten, Basics of Statistical Physics; 2nd ed., pp. 11-22, World Scientific, 2013.
피인용 문헌
- Ozone based high-temperature atomic layer deposition of SiO2thin films vol.59, pp.9, 2017, https://doi.org/10.35848/1347-4065/ab78e4
- Search for adsorption geometry of precursor on surface using genetic algorithm: MoO2Cl2 on SiO2 surface vol.57, pp.6, 2017, https://doi.org/10.1007/s43207-020-00079-0