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Fabrication of Si Inverted Pyramid Structures by Cu-Assisted Chemical Etching for Solar Cell Application

결정질 실리콘 태양전지의 효율개선을 위한 실리콘 역 피라미드 구조체 최적화

  • Park, Jin Hyeong (Department of Materials and Chemical Engineering, Hanyang University) ;
  • Nam, Yoon-Ho (Department of Materials and Chemical Engineering, Hanyang University) ;
  • Yoo, Bongyoung (Department of Materials and Chemical Engineering, Hanyang University) ;
  • Lee, Jung-Ho (Department of Materials and Chemical Engineering, Hanyang University)
  • 박진형 (융합화학공학과, 한양대학교 ERICA캠퍼스) ;
  • 남윤호 (융합화학공학과, 한양대학교 ERICA캠퍼스) ;
  • 유봉영 (융합화학공학과, 한양대학교 ERICA캠퍼스) ;
  • 이정호 (융합화학공학과, 한양대학교 ERICA캠퍼스)
  • Received : 2017.08.31
  • Accepted : 2017.10.30
  • Published : 2017.10.31

Abstract

Antireflective pyramid arrays can be readily obtained via anisotropic etching in alkaline solution (KOH, NaOH), which is widely used in crystalline-Si (c-Si) solar cells. The periodic inverted pyramid arrays show even lower light reflectivity because of their superior light-trapping characteristics. Since this inverted pyramidal structures are mostly achieved using very complex techniques such as photolithograpy and laser processes requiring extra costs, here, we demonstrate the Cu-nanoparticle assisted chemical etching processes to make the inverted pyramidal arrays without the need of photolithography. We have mainly controlled the concentration of $Cu(NO_3)_2$, HF, $H_2O_2$ and temperature as well as time factors that affecting the reaction. Optimal inverted pyramid structure was obtained through reaction parameters control. The reflectance of inverted pyramid arrays showed < 10% over 400 to 1100 nm wavelength range while showing 15~20% in random pyramid arrays.

Keywords

References

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