Transactions on Electrical and Electronic Materials

  • 제18권4호
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  • Pages.195-198
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  • 2017
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  • 1229-7607(pISSN)
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  • 2092-7592(eISSN)
한국전기전자재료학회 (The Korean Institute of Electrical and Electronic Material Engineers)
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Optimal Design of Trench Power MOSFET for Mobile Application

  • Kang, Ey Goo (Department of Photovoltaic Engineering, Far East University)
  • 투고 : 2017.02.21
  • 심사 : 2017.04.22
  • 발행 : 2017.08.25
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초록

This research analyzed the electrical characteristics of an 80 V optimal trench power MOSFET (metal oxide field effect transistor) for mobile applications. The power MOSFET is a fast switching device in fields with low voltage(<100 V) such as mobile application. Moreover, the power MOSFET is a major carrier device that is not minor carrier accumulation when the device is turned off. We performed process and device simulation using TCAD tools such as MEDICI and TSUPREM. The electrical characteristics of the proposed trench gate power MOSFET such as breakdown voltage and on resistance were compared with those of the conventional power MOSFET. Consequently, we obtained breakdown voltage of 100 V and low on resistance of $130m{\Omega}$. The proposed power MOSFET will be used as a switch in batteries of mobile phones and note books.

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참고문헌

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