Journal of the Korea Academia-Industrial cooperation Society (한국산학기술학회논문지)

The Korea Academia-Industrial cooperation Society (한국산학기술학회)
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Review of Failure Mechanisms on the Semiconductor Devices under Electromagnetic Pulses

고출력전자기파에 의한 반도체부품의 고장메커니즘 고찰

  • Kim, Dongshin (Electronic Convergence Material & Device Research Center, Korea Electronics Technology Institute) ;
  • Koo, Yong-Sung (Electronic Convergence Material & Device Research Center, Korea Electronics Technology Institute) ;
  • Kim, Ju-Hee (Electronic Convergence Material & Device Research Center, Korea Electronics Technology Institute) ;
  • Kang, Soyeon (Electronic Convergence Material & Device Research Center, Korea Electronics Technology Institute) ;
  • Oh, Wonwook (Electronic Convergence Material & Device Research Center, Korea Electronics Technology Institute) ;
  • Chan, Sung-Il (Electronic Convergence Material & Device Research Center, Korea Electronics Technology Institute)
  • 김동신 (전자부품연구원 융복합전자소재연구센터) ;
  • 구용성 (전자부품연구원 융복합전자소재연구센터) ;
  • 김주희 (전자부품연구원 융복합전자소재연구센터) ;
  • 강소연 (전자부품연구원 융복합전자소재연구센터) ;
  • 오원욱 (전자부품연구원 융복합전자소재연구센터) ;
  • 천성일 (전자부품연구원 융복합전자소재연구센터)
  • Received : 2016.11.28
  • Accepted : 2017.06.09
  • Published : 2017.06.30
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Abstract

This review investigates the basic principle of physical interactions and failure mechanisms introduced in the materials and inner parts of semiconducting components under electromagnetic pulses (EMPs). The transfer process of EMPs at the semiconducting component level can be explained based on three layer structures (air, dielectric, and conductor layers). The theoretically absorbed energy can be predicted by the complex reflection coefficient. The main failure mechanisms of semiconductor components are also described based on the Joule heating energy generated by the coupling between materials and the applied EMPs. Breakdown of the P-N junction, burnout of the circuit pattern in the semiconductor chip, and damage to connecting wires between the lead frame and semiconducting chips can result from dielectric heating and eddy current loss due to electric and magnetic fields. To summarize, the EMPs transferred to the semiconductor components interact with the chip material in a semiconductor, and dipolar polarization and ionic conduction happen at the same time. Destruction of the P-N junction can result from excessive reverse voltage. Further EMP research at the semiconducting component level is needed to improve the reliability and susceptibility of electric and electronic systems.

본 논문에서는 고출력 전자기파 (Electromagnetic pulses, EMP) 영향에 의해 발생하는 반도체 부품의 물리적 상호작용에 대한 원리와 고장 발생 메커니즘의 연구를 위해 선행된 연구 내용을 고찰하였다. 반도체 부품에서의 전자기파 전이 과정은 3층 (공기/유전체/도체) 구조로 설명할 수 있으며, 복소반사계수에 의하여 이론적으로 흡수되는 에너지를 예상할 수 있다. 반도체 부품에 전달된 과도한 고출력 전자기파로 인한 반도체 부품의 주요 고장 원인은 전자기파 커플링에 의한 부품 소재의 줄 열에너지의 발생이다. 전기장에 의한 유전가열과 자기장에 의한 맴돌이손실에 의해 반도체 칩의 P-N 접합 파괴, 회로패턴의 burn-out과 리드 프레임과 칩을 연결하는 와이어의 손상 등이 발생한다. 즉, 반도체 부품에 전달된 전자기파는 반도체 내부 물질과 상호작용을 하며, 쌍극자분극과 이온 전도도 현상이 동시에 발생하여, 칩 내부의 P-N 접합 부분에 과도한 역전압이 형성되어 P-N 접합 파괴를 유발한다. 향후 고 신뢰성을 요구하는 전기전자시스템에 대한 EMP 내성을 향상하기 위한 반도체 부품 수준의 연구가 필요하다.

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