JSTS:Journal of Semiconductor Technology and Science

  • 제17권3호
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  • Pages.354-362
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  • 2017
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  • 1598-1657(pISSN)
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  • 2233-4866(eISSN)
대한전자공학회 (The Institute of Electronics and Information Engineers)
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Analysis of Electrical Characteristics of AlGaN/GaN on Si Large SBD by Changing Structure

  • Lee, Hyun-Soo (Electronics and Telecommunications Research Institute (ETRI), GaN Power Electronics Research Section) ;
  • Jung, Dong Yun (Electronics and Telecommunications Research Institute (ETRI), GaN Power Electronics Research Section) ;
  • Park, Youngrak (Electronics and Telecommunications Research Institute (ETRI), GaN Power Electronics Research Section) ;
  • Jang, Hyun-Gyu (Electronics and Telecommunications Research Institute (ETRI), GaN Power Electronics Research Section) ;
  • Lee, Hyung-Seok (Electronics and Telecommunications Research Institute (ETRI), GaN Power Electronics Research Section) ;
  • Jun, Chi-Hoon (Electronics and Telecommunications Research Institute (ETRI), GaN Power Electronics Research Section) ;
  • Park, Junbo (Electronics and Telecommunications Research Institute (ETRI), GaN Power Electronics Research Section) ;
  • Mun, Jae Kyoung (Electronics and Telecommunications Research Institute (ETRI), GaN Power Electronics Research Section) ;
  • Ryu, Sang-Ouk (Electronics and Telecommunications Research Institute (ETRI), GaN Power Electronics Research Section) ;
  • Ko, Sang Choon (Electronics and Telecommunications Research Institute (ETRI), GaN Power Electronics Research Section) ;
  • Nam, Eun Soo (Electronics and Telecommunications Research Institute (ETRI), GaN Power Electronics Research Section)
  • 투고 : 2016.05.18
  • 심사 : 2016.12.25
  • 발행 : 2017.06.30
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초록

We investigated the improvement in electrical characteristics of large AlGaN/GaN on Si Schottky barrier diode (SBD) induced by structural change to achieve a better trade-off between the forward and reverse performance to obtain high power conversion efficiency in PFC converter. Using an optimized dry etch condition for a large device, we fabricated three-types of SBD with 63 mm channel width: conventional, recessed, recessed dual-anode-metal SBD. The recessed dual-anode-metal SBD exhibited a very low turn-on voltage of 0.34 V, a high forward current of 1.63 A at 1.5 V, a leakage current of $114{\mu}A$ at -15 V, a breakdown voltage of 794 V.

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참고문헌

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