반도체디스플레이기술학회지 (Journal of the Semiconductor & Display Technology)

한국반도체디스플레이기술학회 (The Korean Society Of Semiconductor & Display Technology)
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FTS장치를 이용한 다양한 공정 조건에서 제작한 ITO 박막의 특성 분석

Characteristics of ITO thin Films Grown under Various Process Condition by Using Facing Target Sputtering (FTS) System

  • 투고 : 2017.03.21
  • 심사 : 2017.03.27
  • 발행 : 2017.03.31
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초록

ITO thin films were grown on the glass substrate under various oxygen gas flow and substrate temperature by using FTS (Facing Target Sputtering) system. To investigate properties of as-prepared films for transparent electrical devices, we employed four-point probe, UV-VIS spectrometer, X-ray diffractometer (XRD), scanning electron microscopy (SEM), Hall Effect measurement system and Atomic Force Microscope (AFM). As a results, all of prepared samples has high transmittance of over 80 % in the visible range (300-800 nm). Their resistivity increased as a function of oxygen gas flow and substrate temperature due to their crystal structure and oxygen defect in the films. As-prepared films have a resistivity of under $10^{-4}({\Omega}-cm)$.

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참고문헌

  1. Y. Hoshi, H. Kato, and K. Funatsu, "Structure and electrical properties of ITO thin films deposited at high rate by facing target sputtering", Thin Solid Films, 445, pp. 245, 2003. https://doi.org/10.1016/S0040-6090(03)01182-9
  2. H. Hosono, H. Ohta, M. Orita, K. Ueda, and M. Hirano, "Frontier of transparent conductive oxide thin films", Vacuum, 66, pp. 419-425, 2002. https://doi.org/10.1016/S0042-207X(02)00165-3
  3. J. W. Ko, B. Y. Jung, and T. Oh, "Annealing Effect with Various Ambient Conditions of ITO Thin Film", Journal of the Semiconductor & Display Technology, Vol. 14, No. 4, pp. 20-24, 2015.
  4. S. Kim and S. Kwon, "High Conductive Transparent Electrode of ITO/Ag/i-ZnO by In-Line Magnetron Sputtering Method", Journal of the Semiconductor & Display Technology, Vol. 14, No. 3, pp. 33-36, 2015.
  5. M. J. Keum and K. H. Kim, "Transparent Conductive Thin Film for Top Emitting Organic Light Emitting Diodes by Sputtering Method", Japanese Journal of Applied Physics, Vol. 45, No. 10B, pp. 8462-8465, 2006. https://doi.org/10.1143/JJAP.45.8462
  6. K. Tominaga, T. Ueda, T. Ao, A. Katkoka, and I. Mori, "ITO films prepared by facing target sputtering system", Thin Solid Films, 194, pp. 281-282, 1996.
  7. C. S. Cho, S. H. Yun, B. H. Kim, K. T. Kim, Y. C. Jung, and J. H. Lee, "Development of rotary-magnet type magnetron source for large area sputtering on flexible substrate", Journal of the Semiconductor & Display Technology, Vol. 11, No. 2, pp. 1-6. 2012.
  8. K. H. Kim, I. H. Son, K. B. Song, S. H. Kong, M. J. Keum, S. Nakagawa, and M. Naoe, "Thin film properties by facing targets sputtering system" Applied Surface Science, Vol. 169-170, pp. 410-414, 2001. https://doi.org/10.1016/S0169-4332(00)00694-2
  9. A. Eshaghi, M. J. Hakimi, and A. Zalib, "Fabrication of titanium zinc oxide (TZO) sol-gel derivednanostructured thin film and investigation ofits optical and electrical properties", Optik, Vol. 126, pp. 5610-5613, 2015. https://doi.org/10.1016/j.ijleo.2015.09.243
  10. Y. Hoshi, H. Kato, and K. Funatsu, "Structure and electrical properties of ITO thin films deposited at high rate by facing target sputtering", Thin Solid Films, 445, pp. 245-250, 2003. https://doi.org/10.1016/S0040-6090(03)01182-9