반도체디스플레이기술학회지 (Journal of the Semiconductor & Display Technology)

한국반도체디스플레이기술학회 (The Korean Society Of Semiconductor & Display Technology)
권호 표지

쇼키 접합을 갖는 박막의 전기적인 특성에 따른 나노반도체구조에 관한 연구

Study on the Nano Semiconductor Structure due to the Electrical Characteristics of Thin Films with Schottky Contacts

  • Oh, Teresa (Division of Semiconductor, Cheongju University)
  • 투고 : 2017.03.15
  • 심사 : 2017.03.24
  • 발행 : 2017.03.31
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초록

To research the electrical properties of ZnS thin films with various annealing conditions, ZnS was prepared by RF magnetron sputtering system and annealed in a vacuum for 10 minutes. All films were analyzed by the XRD, PL and I-V measurement system. The XRD pattern of ZnS film annealed at $100^{\circ}C$ was shifted to lower 2 theta because of the formation of a depletion region at the interface between a substrate and ZnS thin film, and the capacitance was abruptly increased. However, the pattern of XRD of ZnS film annealed at $100^{\circ}C$ with a Schottky contact was showed the amorphous structure, and the current-voltage characteristics were non-linearly observed by the Schottky contact.

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참고문헌

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