Korean Chemical Engineering Research

  • 제55권2호
  • /
  • Pages.275-278
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  • 2017
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  • 0304-128X(pISSN)
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  • 2233-9558(eISSN)
한국화학공학회 (The Korean Institute of Chemical Engineers)
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Modeling on Hydrogen Effects for Surface Segregation of Ge Atoms during Chemical Vapor Deposition of Si on Si/Ge Substrates

  • Yoo, Kee-Youn (Department of Chemical and Biomolecular Engineering, Seoul National University of Science & Technology) ;
  • Yoon, Hyunsik (Department of Chemical and Biomolecular Engineering, Seoul National University of Science & Technology)
  • 투고 : 2016.11.18
  • 심사 : 2016.12.12
  • 발행 : 2017.04.01
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초록

Heterogeneous semiconductor composites have been widely used to establish high-performance microelectronic or optoelectronic devices. During a deposition of silicon atoms on silicon/germanium compound surfaces, germanium (Ge) atoms are segregated from the substrate to the surface and are mixed in incoming a silicon layer. To suppress Ge segregation to obtain the interface sharpness between silicon layers and silicon/germanium composite layers, approaches have used silicon hydride gas species. The hydrogen atoms can play a role of inhibitors of silicon/germanium exchange. However, there are few kinetic models to explain the hydrogen effects. We propose using segregation probability which is affected by hydrogen atoms covering substrate surfaces. We derived the model to predict the segregation probability as well as the profile of Ge fraction through layers by using chemical reactions during silicon deposition.

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참고문헌

  1. Moutanabbir, O. and Gösele, U., "Heterogeneous Integration of Compound Semiconductors," Annu. Rev. Mater. Res., 40, 469-500(2010). https://doi.org/10.1146/annurev-matsci-070909-104448
  2. Heyns, M. and Tsai, W., "Ultimate Scaling of CMOS Logic Devices with Ge and III-V Materials," MRS Bull., 34(7), 485-488(2009). https://doi.org/10.1557/mrs2009.136
  3. Pearsall, T. P., Bevk, J., Feldman, L. C., Bonar, J. M. and Mannerts, J. P., "Structually Induced Optical Transitions in Ge-Si Superlattices," Phys. Rev. Lett., 58(7), 729(1987). https://doi.org/10.1103/PhysRevLett.58.729
  4. Li, J.-Y., Huang, C.-T., andSturm, J. C., "The Effect of Hydrogen on the Surface Segregation of Phosphorus in Epitaxially Grown Relaxed $Si_{0.7}Ge_{0.3}$ Films by Rapid Thermal Chemical Vapor Deposition," Appl. Phys. Lett., 101(14), 142112(2012). https://doi.org/10.1063/1.4757123
  5. Johll, H., Samuel, M., Koo, R. Y., Kang, H. C., Yeo, Y.-C. and Tok, E. S., "Influence of Hydrogen Surface Passivation on Sn Segregation, Aggregation, and Distribution in GeSn/Ge(001) Materials," J. Appl. Phys., 117(20), 205302(2015). https://doi.org/10.1063/1.4921594
  6. Harris, J. J., Ashenford, D. E., Foxon, C. T., Dobson, P. J. and Jpyce, B. A., "Kinetic Limitations to Surface Segregation During MBE Growth of III-V Compounds:Sn in GaAs", Appl. Phys. A, 33(2), 87(1984). https://doi.org/10.1007/BF00617613
  7. Fukatsu, S., Fujita, K., Yaguchi, H., Shiraki, Y. and Ito, R., "Selflimitation in the Surface Segregation of Ge Atoms During Si Molecular Beam Epitaxial Growth," Appl. Phys. Lett., 59(17), 2103(1991). https://doi.org/10.1063/1.106412
  8. Godbey, D. and Ancona, M., "Ge segregation During the Growth of a SiGe Buried Layer by Molecular Beam Epitaxy", Vac. Sci. Technol. B, 11(3), 1120(1993). https://doi.org/10.1116/1.586824
  9. Ohtani, N., Mokler, S., Xie, M. H., Zhang, J. and Joyce, B. A., "Surface Hydrogen Effects on Ge Surface Segregation During Silicon Gas Source Molecular Beam Epitaxy," Jpn. J. Appl. Phys., 33, 2311(1994). https://doi.org/10.1143/JJAP.33.2311
  10. Ohtani, N., Mokler, S., Xie, M. H., Jhang, J. and Joyce, B. A., "RHEED Investigation of Ge Surface Segregation During Gas Source MBE of Si/Si1-xGex Heterostructures," Surf. Sci., 284(3), 305 (1993). https://doi.org/10.1016/0039-6028(93)90501-A
  11. Ohtani, N., Mokler, S. and Joyce, B. A., "Simulation Studies of Ge Surface Segregation During Gas Source MBE Growth of Si/ Si1-xGex Heterostructures," Surf. Sci., 295(3), 325(1993). https://doi.org/10.1016/0039-6028(93)90279-S
  12. Li, Y., Hembree, G. and Venables, J. A., "Quantitative Auger Electron Spectroscopic Analysis of Ge Surface Segregation in Si/Ge/Si(100) Heterostructures," Appl. Phys. Lett., 67(2), 276(1995). https://doi.org/10.1063/1.114781
  13. Zaima, S., Kato, K., Kitani, T., Matsuyama, T., Ikeda, H. and Yasuda, Y., "Surfactant Effect of H Atoms on the Suppression of Ge Segregation in Si Overgrowth on Ge (n ML)/Si(100) Substrates by Gas Source Molecular Beam Epitaxy," J. Cryst. Growth., 150, 944(1995). https://doi.org/10.1016/0022-0248(95)80079-R
  14. Gates, S. M., Greenlief, C. M., Beach, D. B. and Holbert, P. A., "Decomposition of Silane on Si(111)-(7*7) and Si(100)-(2*1) Surfaces Below 500 Degrees C," J. Chem. Phys., 92(5), 3144(1990). https://doi.org/10.1063/1.457912
  15. Gates, S. M. and Kulkarni, S. K., "Kinetics of Surface Reactions in Very Low-Pressure Chemical Vapor Deposition of Si From $SiH_4$," Appl. Phys. Lett., 58(25), 2963(1991). https://doi.org/10.1063/1.104709
  16. Park, S.-S., Park, J.-H., Kim, S.-J. and Jung, S.-C., "The Microwave-assisted Photocatalytic Degradation of Methylene Blue Solution Using $TiO_2$ Balls Prepared by Chemical Vapor Deposition," Korean Chem. Eng. Res., 46(6), 1063-1068(2008).
  17. Hong, J.-H., Kim, S.-H. and Hahn, Y.-B., "Formation of Si Nano Dots and Silicon Carbon Nitride Films by Plasma Enhanced Chemical Vapor Deposition," Korean Chem. Eng. Res., 42(4), 447-450(2004).
  18. Hu, X. F., Xu, Z., Dim, D., Downer, M. C., Parkinson, P. S., Gong, B., Hess, G. and Ekerdt, J. G., "In situ Optical Second-harmonic-generation Monitoring of Disilane Adsorption and Hydrogen Desorption During Epitaxial Growth on Si (001)," Appl. Phys. Lett., 71(10), 1376(1997). https://doi.org/10.1063/1.119927