반도체디스플레이기술학회지 (Journal of the Semiconductor & Display Technology)

한국반도체디스플레이기술학회 (The Korean Society Of Semiconductor & Display Technology)
권호 표지

기판의 종류에 따른 SnO2 박막의 전기적인 특성 연구

Study on the Electrical Characteristics of SnO2 on p-Type and n-Type Si Substrates

  • Oh, Teresa (Division of Semiconductor, Choenju University)
  • 투고 : 2017.04.21
  • 심사 : 2017.06.19
  • 발행 : 2017.06.30
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초록

$ISnO_2$ thin films were prepared on p-type and n-type Si substrates to research the interface characteristics between $SnO_2$ and substrate. After the annealing processes, the amorphous structure was formed at the interface to make a Schottky contact. The O 1s spectra showed the bond of 530.4 eV as an amorphous structure, and the Schottky contact. The analysis by the deconvoluted spectra was observed the drastic variation of oxygen vacancies at the amorphous structure because of the depletion layer is directly related to the oxygen vacancy. $SnO_2$ thin film changed the electrical properties depending on the characteristics of substrates. It was confirmed that it is useful to observe the Schottky contact's properties by complementary using the XPS analysis and I-V measurement.

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참고문헌

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