E2M - 전기 전자와 첨단 소재 (Electrical & Electronic Materials)

  • 제30권9호
  • /
  • Pages.36-45
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  • 2017
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  • 2982-6268(pISSN)
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  • 2982-6306(eISSN)
한국전기전자재료학회 (The Korean Institute of Electrical and Electronic Material Engineers)
권호 표지

원자층 증착법(ALD)을 이용한 SiC MOS 게이트 산화막의 형성

  • 이수형 (서울대학교 재료공학부) ;
  • 김형준 (서울대학교 재료공학부)
  • 발행 : 2017.12.01
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초록

키워드

참고문헌

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