Electrical & Electronic Materials (E2M - 전기 전자와 첨단 소재)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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원자층 증착법(ALD)을 이용한 SiC MOS 게이트 산화막의 형성

  • 이수형 (서울대학교 재료공학부) ;
  • 김형준 (서울대학교 재료공학부)
  • Published : 2017.12.01
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References

  1. S. Dimitrijev and P. Jamet, Microelectron. Reliab., 43, 225 (2003). https://doi.org/10.1016/S0026-2714(02)00270-6
  2. H. Kim and H. J. Kim, Bull. Korean Inst. Electr. Electron. Mater. Eng., 30, 29 (2017).
  3. H. W. Kim, W. Bhang, and N. K. Kim, Ceramist, 19, 5 (2016).
  4. H. Kurimoto, K. Shibata, C. Kimura, H. Aoki and T. Sugino, Appl. Surf. Sci., 253, 2416 (2006). https://doi.org/10.1016/j.apsusc.2006.04.054
  5. P. Deak, J. M. Knaup, T. Hornos, C. Thill, A. Gali, and T. Frauenheim, J. Phys. D: Appl. Phys., 40, (2007).
  6. G. Pensl, S. Beljakowa, T. Frank, K. Gao, F. Speck, T. Seyller, L. Ley, F. Ciobanu, V. Afanas'ev, A. Stesmans, T. Kimoto, and A. Schoner, Phys. Status Solidi B, 245, 1378 (2008). https://doi.org/10.1002/pssb.200844011
  7. KERI report (2004).
  8. J. H. Moon, J. H. Yim, H. S. Seo, D. H. Lee, H. K. Song, J. Heo, H. J. Kim, K. Y. Cheong, W. Bahng, and N. K. Kim, J. Electrochem. Soc., 157, H196 (2010). https://doi.org/10.1149/1.3267508
  9. H. Yoshioka, T. Nakamura, and T. Kimoto, J. Appl. Phys., 112, 024520 (2012). https://doi.org/10.1063/1.4740068
  10. J. A. Cooper Jr., Phys. Status Solidi A, 162, 305 (1997). https://doi.org/10.1002/1521-396X(199707)162:1<305::AID-PSSA305>3.0.CO;2-7
  11. M. Ohring, Materials Science of Thin Films, 2nd ed. (Academic Press, San Diego, 2002) p. 279.
  12. W. J. Cho and Y. C. Kim, J. Vac. Sci. Technol., B, 20, 14 (2002).
  13. G. Y. Chung, J. R. Williams, T. Isaacs-Smith, F. Ren, K. Mcdonald, and L. C. Feldman, Appl. Phys. Lett., 81, 4266 (2002). https://doi.org/10.1063/1.1525058
  14. S. J. Won, Ph. D Dissertation, p. 10 Seoul National University, Republic of Korea, 2010.
  15. C. Kim, J. H. Moon, J. H. Yim, D. H. Lee, J. H. Lee, H. H. Lee, and H. J. Kim, Appl. Phys. Lett., 100, 082112 (2012). https://doi.org/10.1063/1.3689766
  16. M. M. Maranowski and J. A. Cooper Jr., IEEE Trans. Electron Devices, 46, 520 (1999). https://doi.org/10.1109/16.748871
  17. X. Yang, B. Lee, and V. Misra, IEEE Trans. Electron Devices, 63, 2826 (2016) https://doi.org/10.1109/TED.2016.2565665
  18. A. Chanthaphan, T. Hosoi, T. Shimura, and H. Watanabe, AIP Adv., 5, 097134 (2015). https://doi.org/10.1063/1.4930980
  19. Q. Zhu, F. Qin, W. Li, and D. Wang, Physica B, 432, 89 (2014). https://doi.org/10.1016/j.physb.2013.09.043
  20. A. Modic, Y. K. Sharma, Y. Xu, G. Liu, A. C. Ahyi, J. R. Williams, L. C. Feldman, and S. Dhar, J. Electron. Mater., 43, 857 (2014). https://doi.org/10.1007/s11664-014-3022-8