Korean Journal of Materials Research (한국재료학회지)

Materials Research Society of Korea (한국재료학회)
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Surface Analysis of Plasma Pretreated Sapphire Substrate for Aluminum Nitride Buffer Layer

  • Jeong, Woo Seop (Department of Materials Science & Engineering, Korea University) ;
  • Kim, Dae-Sik (Department of Materials Science & Engineering, Korea University) ;
  • Cho, Seung Hee (Department of Materials Science & Engineering, Korea University) ;
  • Kim, Chul (Department of Materials Science & Engineering, Korea University) ;
  • Jhin, Junggeun (LED Procurement Team, LG Innotek) ;
  • Byun, Dongjin (Department of Materials Science & Engineering, Korea University)
  • Received : 2017.11.02
  • Accepted : 2017.11.28
  • Published : 2017.12.27
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Abstract

Recently, the use of an aluminum nitride(AlN) buffer layer has been actively studied for fabricating a high quality gallium nitride(GaN) template for high efficiency Light Emitting Diode(LED) production. We confirmed that AlN deposition after $N_2$ plasma treatment of the substrate has a positive influence on GaN epitaxial growth. In this study, $N_2$ plasma treatment was performed on a commercial patterned sapphire substrate by RF magnetron sputtering equipment. GaN was grown by metal organic chemical vapor deposition(MOCVD). The surface treated with $N_2$ plasma was analyzed by x-ray photoelectron spectroscopy(XPS) to determine the binding energy. The XPS results indicated the surface was changed from $Al_2O_3$ to AlN and AlON, and we confirmed that the thickness of the pretreated layer was about 1 nm using high resolution transmission electron microscopy(HR-TEM). The AlN buffer layer deposited on the grown pretreated layer had lower crystallinity than the as-treated PSS. Therefore, the surface $N_2$ plasma treatment on PSS resulted in a reduction in the crystallinity of the AlN buffer layer, which can improve the epitaxial growth quality of the GaN template.

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References

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