반도체 산업에서의 XPS 및 AFM 분석 기술

References

1. S. Hagstrom, C. Nordling, K. Siegbahn, Z. Physik, 178, 439 (1964) https://doi.org/10.1007/BF01379473
2. K. Siegbahn, Science, 217, 111 (1981)
3. D. Briggs and M. P. Seah, "Practical surface analysis; V1. Auger and X-ray photoelectron spectroscopy", John Wiley & Sons, New York (1983).
4. K. J. Kim, S. M. Lee, J. S. Jang, M. Moret, "Thickness measurement of a thin hetero-oxide film with an interfacial oxide layer by X-ray photoelectron spectroscopy" Applied Surface Science, 258, 3552- 3556 (2012). https://doi.org/10.1016/j.apsusc.2011.11.110
5. K. J. Kim, A. S. Kim, J. S. Jang, et al. "Final report of CCQM-K129 Measurement of Mole Fractions of Cu, In, Ga, Se in Cu(In, Ga)Se2 Film", Metrologia, 53, Tech. Suppl. 08011 (2016). https://doi.org/10.1088/0026-1394/53/1A/08011
6. H. Kwon, S. W. Seo, T. G. Kim, E. S. Lee, P. T. Lahn, S. Yang, S. Ryu, J. W. Kim, "Ultrathin and Flat Layer Black Phosphorus Fabricated by Reactive Oxygen and Water Rinse", ACS Nano, 10, 8723-8731 (2016). https://doi.org/10.1021/acsnano.6b04194
7. B. Bunday et al., "Gaps Analysis for CD Metrology Beyond the 22 nm Node," Proc. SPIE, 8681, 8681-57 (2013).
8. A. Diebold, "Semiconductor Metrology from New Transistor and Interconnect Materials to Future Nano Structures," Proc. SPIE, Metrology, Inspection, and Process Control for Microlithography XXV, 7971-01 (2011).
9. R. James, "Intel 22 nm Tri-Gate Technology at VLSI Symposium," Chipworks Real Chips Bolg, http://electroiq.com/chipworks_real_chips_blog/2012/04/12/intel-to-present-on-22-nm-tri-gatetechnology-at-vlsi-symposium/
10. C. Shin et al. "Fast, exact, and non-destructive diagnoses of contact failures in nano-scale semiconductor device using conductive AFM", Scientific Reports, 3, 2088 (2013). https://doi.org/10.1038/srep02088
11. http://www.nanotools.com/
12. https://www.bruker.com/products/surface-and-dimensionalanalysis/atomic-force-microscopes.html