JSTS:Journal of Semiconductor Technology and Science

  • 제16권5호
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  • Pages.624-629
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  • 2016
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  • 1598-1657(pISSN)
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  • 2233-4866(eISSN)
대한전자공학회 (The Institute of Electronics and Information Engineers)
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Influence of Electron and Hole Distribution on 2T SONOS Embedded NVM

  • 투고 : 2016.01.24
  • 심사 : 2016.04.10
  • 발행 : 2016.10.30
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초록

The influence of electron and hole (EH) distribution on two-transistor (2T) silicon-oxide-nitride-oxide-silicon (SONOS) embedded nonvolatile memory (eNVM) is investigated in terms of reliability. As PE (program/erase) cycles are repeated, it is observed that the electron distribution in the nitride layer becomes wider. It leads to the EH distribution mismatch, which degrades the reliability of 2T SONOS eNVM.

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참고문헌

  1. Y. Kwon, T. Lee, J. Kim, S. Park, I. Cho and K. Yoo, "Characterization of 64kB Test Chip for Touch Application on 90nm SONOS Technology," Proc. IEEE 6th International Memory Workchop, pp. 1-4, May. 2014.
  2. A. Furnemont, M. Rosmeulen, J. Van Houdt, H. Maes, and K. De Meyer, "Cycling behavior of nitride charge profile in NROM-type memory cells," in Proc. 21st Non-Volatile Semicond. Memory Workshop, pp. 66-67, Feb. 2006.
  3. A. Padovani, L. Larcher, and P. Pavan, "Hole distributions in erased NROM devices: profiling method and effects on reliability," IEEE Trans. Electron Devices, vol. 55, no. 1, pp. 343-349, Jan. 2008. https://doi.org/10.1109/TED.2007.910572
  4. N. K. Zous, M. T. Lee, W. J. Tsai, A. Kuo, L. T. Huang, T. C. Lu, C. J. Liu, T. Wang, W. P. Lu, W. Ting, J. Ku, and C.-Y. Lu, "Lateral migration of trapped holes in a nitride storage flash memory cell and its qualification methodology," IEEE Electron Devices Lett., vol. 25, no. 9, pp. 649-651, Sep. 2004. https://doi.org/10.1109/LED.2004.833824
  5. Sentaurus Device User Guide Version: H-2013.03, Synopsys, 2013.
  6. A. Shappir, D. Levy, Y. Shacham-Diamand, E. Lusky, I. Bloom, and B. Eitan, "Spatial characterization of localized charge trapping and charge redistribution in the NROM device," Solid-State Electron., vol. 48, no. 9, pp. 1489-1495, Sep. 2004. https://doi.org/10.1016/j.sse.2004.03.013
  7. E. Lusky, Y. Shacham-Diamand, G. Mitenberg, A. Shappir, I. Bloom, and B. Eitan, "Investigation of channel hot electron injection by localized chargetrapping nonvolatile memory devices," IEEE Trans. Electron Devices, vol. 51, no. 3, pp. 444-451, Mar. 2004. https://doi.org/10.1109/TED.2003.823245
  8. E. Lusky, Y. Shacham-Diamand, B. Eitan, and I. Bloom, "Characterization of channel hot electron injection by the subthreshold slope of NROM device," IEEE Electron Device Lett., vol. 22, no. 11, pp. 556-558, Nov. 2001. https://doi.org/10.1109/55.962662
  9. L. Larcher, G. Verzellesi, P. Pavan, E. Lusky, I. Bloomm, and B. Eitan, "Impact of programming charge distribution on threshold voltage and subthreshold slope of NROM memory cells," IEEE Trans. Electron Devices, vol. 49, pp, 1939-1946, Nov. 2002. https://doi.org/10.1109/TED.2002.804726
  10. A. Shappir, Y. Shacham-Diamand, E. Lusky, I. Bloom, B. Eitan, "Subthreshold slope degradation model for localized-charge-trapping based nonvolatile memory devices," Solid-State Electron.,vol. 47, no. 5,pp. 937-941, May. 2003. https://doi.org/10.1016/S0038-1101(02)00454-9