참고문헌
- Mohamed T. Ghoneim and Muhanmmad M. Hussain, "Review on Physically Flexible Nonvolatile Memory for Internet of Everything Electronics", Electronics, Vol. 4, 2015, pp. 424-479 https://doi.org/10.3390/electronics4030424
- H.-S. Philip Wong et al., "Metal-Oxide RRAM", Proceedings of the IEEE, Vol.100, No.6, 2012, pp. 1951-1970 https://doi.org/10.1109/JPROC.2012.2190369
- Yoshihisa Fujisaki. "Review of Emerging New Solid-State Non-Volatile Memories", Japanese Journal of Applied Physics, Vol. 52, No. 040001, 2013
- Nicola R. S. Farley, "Sol-gel formation od ordered nanostructured doped ZnO film", Journal of Materials Chemistry, Vol. 14, 2004, pp. 1087-1092 https://doi.org/10.1039/b313271d
- Chun-Chieh Lin et al, "Graphene-oxide-based resistive switching device for flexible nonvolatile memory application", Japanese Journal of Applied Physics, Vol. 53, 2014, pp. 05FD03-1-4 https://doi.org/10.7567/JJAP.53.05FD03
- Z.Wei et al, "Highly Reliable TaOx ReRAM and Direct Evidence of Redox Reaction Mechanism", Electron Device Meeting, 2008, IEDM 2008, Dec.15-17, pp. 1-4
- Dae-Hwang Yoo et al, "Effect of copper oxide on the resistive switching responses of graphenen oxide film", Current Applied Physics, No.14, 2014, pp. 1031-1303 https://doi.org/10.1016/j.cap.2014.05.010
- Hu Young Jeong et al, "Graphene Oxide Thin Films for Flexible Nonvolatile Memory Applications", Nano Lett, 2010, Vol. 10, pp. 4381-4386 https://doi.org/10.1021/nl101902k
- Je Bock Chung et al, "Enhancement of memory windows in Pt/Ta2O5-x/Ta bipolar resistive switches via a graphene oxide insertion layer", Thin Solid Films, 2014, pp. 1-4
- Lu-Hao Wang et al, "The mechanism of the asymmetric SET and RESET speed of graphene oxide based flexible resistive switching memories", Applied Physics Letters, No.100, 2012, pp. 1-4
- Dmitrity A. Dikin et al, "Preparation and characterization of graphene oxide paper", Nature Letters, Vol. 448, 2007, pp. 457-460 https://doi.org/10.1038/nature06016
- Geetika Khuranan et al, "Forming Free resistive switching in graphene oxide thin film for thermally stable non volatile memory applications", Journal of Applied Physics, Vol. 114, No. 124508, 2013, pp. 1-6 https://doi.org/10.1152/japplphysiol.01313.2012
- Chung-Nan Peng, "Resistive switching of Au/ZnO/Au resistive memory: an in situ observation of conductive bridge formation", Nanoscale Research Letters, Vol. 7, No. 559, 2012, pp. 1-6 https://doi.org/10.1186/1556-276X-7-1
- Fang Yuan et al., "Retention Behavior of Graphene Oxide Resistive Switching Memory on Flexible Substrate", IEEE, 5th International Nanoelectronics Conference, Singapore, 2-4 Jan. 2013, pp. 288-290
- C. L. He et al., "Nonvolatile resistive switching in graphene oxide thin films", Applied Physics Letters, Vol. 95, No. 232101, 2009, pp. 1-3
- Dong Ick Son et al., "Flexible Organic Bistable Devices Based on Graphene Embedded in an Insulating Poly (methyl methacrylate) Polymer Layer", Vol. 10, 2010, pp. 2441-2447 https://doi.org/10.1021/nl1006036
- Chaoxing Wu et al., "Highly reproducible memory effect of organic multilevel resistive-switch device utilizing graphene oxide sheets/polyimide hybrid nanocomposite", Vol. 99, 2011, pp. 1-3
- Chung-Nan Peng et al., "Resistive switching of Au/ZnO/Au resistive memory : an in situ observation of conductive bridge formation", Nanoscale Research Letters, Vol.7, 2012, pp. 1-6 https://doi.org/10.1186/1556-276X-7-1