한국재료학회지 (Korean Journal of Materials Research)

  • 제26권6호
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  • Pages.342-346
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  • 2016
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  • 1225-0562(pISSN)
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  • 2287-7258(eISSN)
한국재료학회 (Materials Research Society of Korea)
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열처리 온도에 따라서 절연체, 반도체, 전도체의 특성을 갖는 GZO 박막의 특성연구

Study on GZO Thin Films as Insulator, Semiconductor and Conductor Depending on Annealing Temperature

  • Oh, Teresa (Department of Semiconductor Engineering, Cheongju University)
  • 투고 : 2016.02.04
  • 심사 : 2016.05.24
  • 발행 : 2016.06.27
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초록

To observe the bonding structure and electrical characteristics of a GZO oxide semiconductor, GZO was deposited on ITO glasses and annealed at various temperatures. GZO was found to change from crystal to amorphous with increasing of the annealing temperatures; GZO annealed at $200^{\circ}C$ came to have an amorphous structure that depended on the decrement of the oxygen vacancies; increase the mobility due to the induction of diffusion currents occurred because of an increment of the depletion layer. The increasing of the annealing temperature caused a reduction of the carrier concentration and an increase of the bonding energy and the depletion layer; therefore, the large potential barrier increased the diffusion current dna the Hall mobility. However, annealing temperatures over $200^{\circ}C$ promoted crystallinity by the defects without oxygen vacancies, and then degraded the depletion layer, which became an Ohmic contact without a potential barrier. So the current increased because of the absence of a potential barrier.

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참고문헌

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