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Introduction to research of atomically thin MoS2 and its electrical properties

2차원 MoS2 물질 기반의 전자소자 연구

  • 이탁희 (서울대학교 물리천문학부) ;
  • 김태영 (서울대학교 물리천문학부) ;
  • 조경준 (서울대학교 물리천문학부) ;
  • 박진수 (서울대학교 물리천문학부)
  • Published : 2016.03.30
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Abstract

Molybdenum disulfide ($MoS_2$), which has 0.65 nm-thick atomic layer, can be easily separated layer by layer due to weak van der Waals interactions in out-of-plane direction. ($MoS_2$), has a good potential in nanoelectronics, because it has high electrical mobility and On/Off ratio. Its band gap energy changes from indirect to direct band gap energy as it goes from bulk to monolayer. Therefore, atomically thin ($MoS_2$), is widely studied in academic and engineering fields. Here, we introduce the research of atomically thin $MoS_2$ and discuss the research directions.

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