Journal of Ceramic Processing Research
- 제17권7호
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- Pages.763-767
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- 2016
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- 1229-9162(pISSN)
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- 2672-152X(eISSN)
Effect of residual oxygen in a vacuum chamber on the deposition of cubic boron nitride thin film
- Oh, Seung-Keun (MPNICS Co., Ltd.) ;
- Kang, Sang Do (MPNICS Co., Ltd.) ;
- Kim, Youngman (Department of Materials Science and Engineering, Chonnam National University) ;
- Park, Soon Sub (Seonam Regional Division, Korea Institute of Industrial Technology)
- 발행 : 2016.12.01
초록
The structural characterization of cubic boron nitride (c-BN) thin films was performed using a B4C target in a radio-frequency magnetron sputtering system. The deposition processing conditions, including the substrate bias voltage, substrate temperature, and base pressure were varied. Fourier-transform infrared spectroscopy and X-ray photoelectron spectroscopy were used to analyze the crystal structures and chemical binding energy of the films. For the BN film deposited at room temperature, c-BN was formed in the substrate bias voltage range of -400 V to -600 V. Less c-BN fraction was observed as the deposition temperature increased, and more c-BN fraction was observed as the base pressure increased.