한국표면공학회지 (Journal of the Korean institute of surface engineering)

  • 제49권1호
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  • Pages.54-61
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  • 2016
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  • 1225-8024(pISSN)
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  • 2288-8403(eISSN)
한국표면공학회 (The Korean Institute of Surface Engineering)
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무전해 도금을 이용한 Si 태양전지 Ni-W-P/Cu 전극 형성

Formation of Ni-W-P/Cu Electrodes for Silicon Solar Cells by Electroless Deposition

  • Kim, Eun Ju (Electrochemistry Department, Surface Technology Division, Korea Institute of Materials Science) ;
  • Kim, Kwang-Ho (Department of Materials Science and Engineering, Pusan National University) ;
  • Lee, Duk Haeng (Hojin Platech Co.,Ltd.) ;
  • Jung, Woon Suk (Hojin Platech Co.,Ltd.) ;
  • Lim, Jae-Hong (Electrochemistry Department, Surface Technology Division, Korea Institute of Materials Science)
  • 투고 : 2016.02.17
  • 심사 : 2016.02.29
  • 발행 : 2016.02.29
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초록

Screen printing of commercially available Ag paste is the most widely used method for the front side metallization of Si solar cells. However, the metallization using Ag paste is expensive and needs high temperature annealing for reliable contact. Among many metallization schemes, Ni/Cu/Sn plating is one of the most promising methods due to low contact resistance and mass production, resulting in high efficiency and low production cost. Ni layer serves as a barrier which would prevent copper atoms from diffusion into the silicon substrate. However, Ni based schemes by electroless deposition usually have low thermal stability, and require high annealing process due to phosphorus content in the Ni based films. These problems can be resolved by adding W element in Ni-based film. In this study, Ni-W-P alloys were formed by electroless plating and properties of it such as sheet resistance, resistivity, specific contact resistivity, crystallinity, and morphology were investigated before and after annealing process by means of transmission line method (TLM), 4-point probe, X-ray diffraction (XRD), and Scanning Electron Microscopy (SEM).

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