한국재료학회지 (Korean Journal of Materials Research)

  • 제26권12호
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  • Pages.688-695
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  • 2016
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  • 1225-0562(pISSN)
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  • 2287-7258(eISSN)
한국재료학회 (Materials Research Society of Korea)
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순도에 따른 Al 판재의 재결정 거동

Recrystallization Behavior of Aluminum Plates Depending on Their Purities

  • 이현우 (강릉원주대학교 신소재금속공학과) ;
  • 하태권 (강릉원주대학교 신소재금속공학과) ;
  • 박형기 (한국생산기술연구원 강원본부) ;
  • 민석홍 (강릉원주대학교 신소재금속공학과)
  • Lee, Hyun Woo (Department of Advanced Metal and Materials Engineering, Gangneung-Wonju National University) ;
  • Ha, Tae Kwon (Department of Advanced Metal and Materials Engineering, Gangneung-Wonju National University) ;
  • Park, Hyung-Ki (Korea Institute of Industrial Technology, Gangwon Regional Division) ;
  • Min, Seok-Hong (Department of Advanced Metal and Materials Engineering, Gangneung-Wonju National University)
  • 투고 : 2016.10.10
  • 심사 : 2016.10.31
  • 발행 : 2016.12.27
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초록

Recrystallization behavior has been investigated for commercial purity AA1050 (99.5wt%Al) and high purity 3N Al (99.9wt% Al). Samples were cold rolled with 90% of thickness reduction and were annealed isothermally at 290, 315, and 350o C for various times until complete recrystallization was achieved. Hardness measurement and Electron Backscatter Diffraction(EBSD) analyses, combined with Grain Orientation Spread(GOS), were employed to investigate the recrystallization behavior. EBSD analysis combined with GOS were distinctly revealed to be a more useful method to determine the recrystallization fraction and to characterize the recrystallization kinetics. As the annealing temperature increased, recrystallization in AA1050 accelerated more than that process did in Al 3N. Both AA1050 and Al 3N showed the same temperature dependence of the n value of the Johnson-Mehl-Avrami-Kolmogorov equation(JMAK equation), i.e., n values increased as annealing temperature increased. Activation energy of recrystallization in AA1050 is about 176 kJ/mol, which is comparable with the activation energy of grain boundary migration in cold-rolled AA1050. This value is somewhat higher than the activation energy of recrystallization in Al 3N.

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