References
- Saleh Kargarrazi et al., "A monolithic SiC drive circuit for SiC Power BJTs", Proc. 27th ISPSD, 2015.
- Kamel Madjour, "Silicon Carbide market update - From discrete devices to modules", PCIM Europe 2014
- Yole SiC Market report, Yole, 2014
- Siddarth Sundaresan et al., "10kV SiC BJT - static, switching and reliability characteristics", Proc. 25th ISPSD, 2013.
- The World Market for SiC & GaN Power Semiconductor Report, IMS Research, 2013
- Subhashish Bhattacharya, "15kV SiC IGBT Modules for Grid Scale Power Conversion", ARPA-E ADEPT Program, 2010.
- Jose Millan, "A New Generation of Power Semiconductor Devices", SAAEI 2009.
- Jeffrey B. Casady, "Recent Advancements in SiC power devices & the impact of normally-off JFETs on PV inverter platforms", IRM 2009.
- A. R. Hefiner, R. Singh, J. Lai, D. W. Berning, S. Bouche, C. Chapuy, "SiC Power Diodes Provide Breakthrough Performance for a Wide Range of Applications," IEEE Trans. PE., vol. 16, no. 2, March, pp. 273-280, 2001.
- Qingchun Zhang, Mrinal Das, Joe Sumakeris, Robert Callanan, and Anant Agarwal, "12-kV p-Channel IGBTs With Low On-Resistance in 4H-SiC," IEEE Trans. EDL., vol 29, no. 9, Sept. pp. 1027-1029, 2008. https://doi.org/10.1109/LED.2008.2001739
- K. Hamada, "Installation of of All-SiC Inverter System to Hybrid Electric Vehicle", Plenary Speech of ICSCRM 2015, Sicily, Italy, Oct. 9, 2015.