References
- R. Quay, C. Moglestue, V. Palankovski, and S. Selberherr, "A temperature dependent model for the saturation velocity in semiconductor materials," Mater. Sci. Semicond. Process., vol. 3, no. 1, pp. 149-155, Mar. 2000. https://doi.org/10.1016/S1369-8001(00)00015-9
- C. Jacoboni, F. Nava, C. Canali, and G. Ottaviani "Electron drift velocity and diffusivity in germanium," Phys. Rev. B: Condens. Matter, vol. 24, no. 2, pp. 1014-1026, Jul. 1981. https://doi.org/10.1103/PhysRevB.24.1014
- C. Canali, G. Ottaviani and A. Quaranta, "Drift velocity of electrons and holes and associated anisotropic effects in silicon." J. Phys. Chem. Solids, vol. 32, no. 8, pp. 1707-1720, Nov. 1970. https://doi.org/10.1016/S0022-3697(71)80137-3
- S. Lee and S. Lee, "Accurate RF C-V method to extract effective channel length and parasitic capacitance of deep-submicron LDD MOSFETs," J. Semicond. Technol. Sci., vol. 15, no. 6, pp. 653-657, Dec. 2015. https://doi.org/10.5573/JSTS.2015.15.6.653
- S. Kim, J. Seo, Y. Yoon, G. Yoo, Y. Kim, H. Eun, H. Kang, J. Kim, S. Cho, J. Lee, and I. Kang, "Design and Analysis of Sub-10 nm Junctionless Fin-Shaped Field-Effect Transistors," J. Semicond. Technol. Sci., vol. 14, no. 5, pp. 508-517, Oct. 2014. https://doi.org/10.5573/JSTS.2014.14.5.508
- F. Jazaeri, L. Barbut, A. Koukab, and J. Sallese, "Analytical model for ultra-thin body junctionless symmetric double gate MOSFETs in subthreshold regime," Solid-State Electron., vol. 82, pp. 103-110, Apr. 2013. https://doi.org/10.1016/j.sse.2013.02.001
- G. K. Celler and S. Cristoloveanu, "Frontiers of silicon-on-insulator," J. Appl. Phys., vol. 93, no. 9, pp. 4955-4978, May 2013.
- J. Feng, Y. Liu, P. B. Griffin, and J. D. Plummer, "Integration of germanium-on-insulator and silicon MOSFETs on a silicon substrate," IEEE Trans. Electron Devices, vol. 27, no. 11, pp. 911-913, Nov. 2006. https://doi.org/10.1109/LED.2006.883286
- C. Sun, R. Liang, L. Liu, J. Wang, and J. Xu, "Effect of channel doping profiles on performance of germanium-on-insulator based junctionless transistors." Proc. 2015 IEEE International Symposium on Next-Generation Electronics (ISNE), Taipei, Taiwan, May 4-6, 2015, pp. 1-3.
- International Technology Roadmap for Semiconductors (ITRS), 2013 Edition, Online available at http://www.itrs2.net.
-
S. Lee, H. Kim, J. Lee, I. Yu, J. Lee and C. Hwang, "Effects of
$O_3$ and$H_2O$ as oxygen sources on the atomic layer deposition of$HfO_2$ gate dielectrics at different deposition temperatures," J. Mater. Chem. C, vol. 24, no. 2, pp. 2558-2568, Jan. 2014. - J. P. Colinge, C. W. Lee, N. Dehdashti, R. Yan, I. Ferain, P. Razavi, A. Kranti, and R. Yu, Junctiobnless Transistors: Physics and Properties, Springer-Verlag, Berlin, Germany, 2011.
- C. W. Lee, F. Isabelle, A. Aryan, Y. Ran, D. Nima, R. Pedram, and J. P. Colinge, "Performance estimation of junctionless multigate transistors," Solid-State Electron., vol. 54, no.2, pp. 97-103, Feb. 2010. https://doi.org/10.1016/j.sse.2009.12.003
- J. P. Colinge, C. W. Lee, A. Afzalian, N. Dehdashti, R. Yan, I. Ferain, P. Razavi, B. O'Neill, A. Blake, M. White, A. Kelleher, B. McCarthy, and R. Murphy, "SOI gated resistor: CMOS without junctions," Proc. 2009 IEEE International SOI Conference, Foster City, USA, Oct. 5-8, 2009, pp. 1-2.
-
S. M. Sze and J. C. Irvin, "Resistivity, mobility and impurity levels in GaAs, Ge, and Si at
$300^{\circ}K$ ," Solid State Electron., vol. 11, no. 6, pp. 599-602, Jan. 1968. https://doi.org/10.1016/0038-1101(68)90012-9 - P. P. Debye and E. M. Conwell, "Electrical properties of n-type germanium," Phys. Rev. Appl, vol. 93, no. 4, pp. 693-706, Feb. 1954.
- D. M. Caughey and R. E. Thomas, "Carrier mobilities in silicon empirically related to doping and field," Proc. IEEE, vol. 55, no. 12, pp. 2192-2193, Sep. 1967. https://doi.org/10.1109/PROC.1967.6123
- G. Hellings, G. Eneman, R. Krom, B. D. Jaeger, J. Mitard, A. D. Keersgieter, T. Hoffmann, M. Meuris, and K. D. Meyer, "Electrical TCAD simulations of a Germanium pMOSFET technology," IEEE Trans. Electron Devices, vol. 57, no. 10, pp. 2539-2546, Oct. 2010. https://doi.org/10.1109/TED.2010.2060726
- L. Reggiani, C. Canali, F. Nava, and G. Ottaviani, "Hole drift velocity in germanium," Phys. Rev. B: Condens. Matter, vol. 16, no. 6, pp. 2781-2791, Sep. 1977. https://doi.org/10.1103/PhysRevB.16.2781
- S. A. Hareland, S. Jallepalli, G. Chindalore, W. K. Shih, A. F. Tasch, Jr., and C. M. Maziar, "A Simple Model for Quantum Mechanical Effects in Hole Inverson Layers in Silicon PMOS Device," IEEE Transactions On Electron Devices," vol. 44, no. 7, pp. 1172-1173, Jul. 1997. https://doi.org/10.1109/16.595947
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