전력전자분야에서 GaN 전력반도체를 위한 회로기술 연구동향

  • 발행 : 2016.02.01

초록

키워드

참고문헌

  1. H. A. Mantooth, M. D. Glover, and P. Shepherd, "Wide Bandgap Technologies and Their Implications on Miniaturizing Power Electronic Systems," IEEE Journal of Emerging and Selected Topics in Power Electron., vol. 2, no. 3, pp. 374-385, Sep. 2014. https://doi.org/10.1109/JESTPE.2014.2313511
  2. J. Millan, P. Godignon, X. Perpina, A. Perez-Tomas, and J. Rebollo, "A Survey of Wide Bandgap Power Semiconductor Devices," IEEE Trans. Power Electron., vol. 29, no. 5, pp. 2155-2163, May 2014. https://doi.org/10.1109/TPEL.2013.2268900
  3. (2010)[Online].Available:http://www.powdec.co.jp/ Diode.pdf
  4. J. L. Hudgins, "Power Electronic Devices in the Future," IEEE Journal of Emerging and Selected Topics in Power Electron., vol. 1, no. 1, pp. 11-17, March 2013. https://doi.org/10.1109/JESTPE.2013.2260594
  5. W. Saito, Y. Takada, M. Kuraguchi, K. Tsuda, and I. Omura, "Recessed-gate structure approach toward normally-off high-voltage AlGaN/GaN HEMT for power electronics applications," IEEE Trans. Electron. Devices, vol. 53, no. 2, pp. 356-362, Feb. 2006. https://doi.org/10.1109/TED.2005.862708
  6. Y. Cai, Y. Zhou, K. M. Lau, and K. J. Chen, "Control of threshold voltage of AlGaN/GaN HEMTs by fluoride-based plasma treatment: From depletion mode to enhancement mode," IEEE Trans. Electron. Devices, vol. 53, no. 9, pp. 2207-2215, Sep. 2006. https://doi.org/10.1109/TED.2006.881054
  7. T. Palacios, C.-S. Suh, A. Chakraborty, S. Keller, S. P. DenBaars, and U. K. Mishra, "High-performance E-Mode AlGaN/GaN HEMTs," IEEE Trans. Electron. Devices Lett., vol. 27, no. 6, pp. 428-430, Jun. 2006.. https://doi.org/10.1109/LED.2006.874761
  8. X. Hu, G. Simin, J. Yang, M. A. Khan, R. Gaska, and M. S. Shur, "Enhancement-mode AlGaN/GaN HEMT with selectively grown pn junction gate," Electron, Lett., vol. 36, pp. 753-754, 2000. https://doi.org/10.1049/el:20000557
  9. 장바울, 강상우, 조보형, 김진한, 서한솔, 박현수, "GaN FET을 이용한 토템폴 구조의 브리지리스 부스트 PFC 컨버터," 전력전자학회, 전력전자학회논문지 20(3), pp. 214-222, 2015. 6. https://doi.org/10.6113/TKPE.2015.20.3.214
  10. Z. Zhang, W. Zhang, F. Wang, L. M. Tolbert, and B. J. Blalock, "Analysis of the switching speed limitation of wide band-gap devices in a phase-leg configuration," in Proc. IEEE ECCE, Sep. 2012, pp. 3950-3955.
  11. 주동명, 김동식, 이병국, 김종수, "Cascode GaN HEMT 를 적용한 위상 천이 dc-dc 컨버터의 구현 및 문제점 분석," 전력전자학회, 전력전자학회논문지 20(6), pp. 558-565, 2015. 12. https://doi.org/10.6113/TKPE.2015.20.6.558
  12. D. Reusch and J. Strydom, "Understanding the Effect of PCB Layout on Circuit Performance in a High-Frequency Gallium-Nitride-Based Point-of Load Converter," IEEE Trans. Power Electron., vol. 29, no. 4, pp. 2008-2015, April 2014. https://doi.org/10.1109/TPEL.2013.2266103
  13. L. Hoffmann, C. Gautier, S. Lefebvre, and F. Costa, "Optimization of the Driver of GaN Power Transistors Through Measurement of Their Thermal Behavior," IEEE Trans. Power Electron., vol. 29, no. 5, pp. 2359-2366, May 2014. https://doi.org/10.1109/TPEL.2013.2277759
  14. E. O. Johnson, "Physical Limitations on Frequency and Power Parameters of Transistors," RCA, pp. 163-177, 1965.
  15. R. W. Keyes, "Figure of Merit for Semiconductors for High-Speed Switches," Proc. IEEE, p. 225, 1972.
  16. B. J. Baliga, "semiconductors for High-Voltage, Vertical Channel FET's," J. Appl. Phy., vol. 53, pp. 1759-1764, 1982. https://doi.org/10.1063/1.331646
  17. B. J. Baliga, "Power Semiconductor Device Figureof- Merit for High Frequency Applications," IEEE Electron Device Letters, vol. 10, pp. 455-457, 1989. https://doi.org/10.1109/55.43098
  18. I. J. Kim, S. Matsumoto, T. Sakai, and T. Yachi, "New Power Device Figure-of-Merit for high Frequency Applications," in Proc. Int. Symp. Power Semiconductor Devices ICs, Yokihama, Japan, 1995, pp. 309-314.
  19. A. Q. Huang, "New Unipolar Switching Power Device Figures of Merit," IEEE Electron Device Letters, vol. 25, pp. 298-301, 2004. https://doi.org/10.1109/LED.2004.826533
  20. D. Reusch, J. Strydom, and A. Lidow, "Improving System Performance with eGaN FETs in DCDC Applications," International Microelectronics Assembly and Packaging Society (IMAPS), pp. 764-769, 2013.
  21. D. Reusch and J. Strydom, "Evaluation of Gallium Nitride Transistors in High Frequency Resonant and Soft-Switching DC-DC Converters," IEEE Trans. Power Electron., DOI: 10.1109/TPEL.2014.2364799.
  22. X. Huang, Z. Liu, Q. Li, and F. C. Lee, "Evaluation and Application of 600V GaN HEMT in Cascode Structure," IEEE Trans. Power Electron., vol. 29, no. 5, pp. 2453-2461, May. 2014. https://doi.org/10.1109/TPEL.2013.2276127
  23. Y. F. Wu, J. Gritters, L. Shen, R. P. Smith, and B. Swenson, "kV-Class GaN-on-Si HEMTs Enabling 99% Efficiency Converter at 800V and 100kHz," IEEE Trans. Power Electron., vol. 29, no. 6, pp. 2634 - 2637, Jun. 2014. https://doi.org/10.1109/TPEL.2013.2284248
  24. J. G. Kassakian and T. M. Jahns, "Evolving and Emerging Applications of Power Electronics in Systems," IEEE Journal of Emerging and Selected Topics in Power Electron., vol. 1, no. 2, pp. 47-58, Jun. 2013. https://doi.org/10.1109/JESTPE.2013.2271111