Transactions on Electrical and Electronic Materials

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Study on the Structural and Mechanical Characteristics of ITO Films Deposited by Pulsed DC Magnetron Sputtering

  • Kang, Junyoung (College of Information and Communication Engineering, Sungkyunkwan University) ;
  • Le, Anh Huy Tuan (College of Information and Communication Engineering, Sungkyunkwan University) ;
  • Park, Hyeongsik (College of Information and Communication Engineering, Sungkyunkwan University) ;
  • Kim, Yongjun (College of Information and Communication Engineering, Sungkyunkwan University) ;
  • Yi, Junsin (College of Information and Communication Engineering, Sungkyunkwan University) ;
  • Kim, Sunbo (Department of Energy Science, Sungkyunkwan University)
  • Received : 2016.04.26
  • Accepted : 2016.06.20
  • Published : 2016.12.25
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Abstract

The mechanical properties of ITO films such as adhesion and internal stress are very important for the commercial application of solar cell devices. We report high quality pulsed DC magnetron sputtered ITO films deposited on silicon and glass substrates with low resistivity and high transmittance for various working pressures ranging from 0.96 to 3.0 mTorr. ITO films showed the lowest resistivity of $2.68{\times}10^{-4}{\Omega}{\cdot}cm$, high hall mobility of $46.89cm^2/V.s$, and high transmittance (>85%) for the ITO films deposited at a low working pressure of 0.99 mTorr. The ITO films deposited at a low working (0.96 mTorr) pressure had both amorphous and polycrystalline structures and were found to have compressive stress while the ITO films deposited at higher temperature than 0.99 mTorr was mixture of amorphous and polycrystalline and was found to have tensile stress.

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References

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