차세대 Ge/III-V 반도체 소자 연구

  • 오정우 (연세대학교 글로벌융합공학부)
  • 발행 : 2015.07.25

초록

키워드

참고문헌

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  5. Kelin Kuhn, Peering into Moore's Crystal Ball: Transistor Scaling beyond the 15nm node, International symposium on advanced gate stack technology, 2010
  6. Jungwoo Oh, CMOS-compatible III-V/Ge Channels for High-Performance and Low-Power, Semicon Japan 2011
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  8. Silvia Fama, Lorenzo Colace, Gianlorenzo Masini, Gaetano Assanto and Hsin-Chiao Luan, High performance germanium-on-silicon detectors for optical communications, Appl. Phys. Lett. 81, 586 (2002) https://doi.org/10.1063/1.1496492
  9. Hsin-Chiao Luan, Desmond R. Lim, Kevin K. Lee, Kevin M. Chen, Jessica G. Sandland, Kazumi Wada and Lionel C. Kimerling, High-quality Ge epilayers on Si with low threadingdislocation densities, Appl. Phys. Lett. 75, 2909 (1999) https://doi.org/10.1063/1.125187
  10. J. Bai, J.-S. Park, Z. Cheng, M. Curtin, B. Adekore, M. Carroll, A. Lochtefeld and M. Dudley, Study of the defect elimination mechanisms in aspect ratio trapping Ge growth, Appl. Phys. Lett. 90, 101902 (2007) https://doi.org/10.1063/1.2711276