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Transparent Conducting Multilayer Electrode (GTO/Ag/GTO) Prepared by Radio-Frequency Sputtering for Organic Photovoltaic's Cells

  • Pandey, Rina (Materials and Life Science Division, Korea Institute of Science and Technology (KIST)) ;
  • Kim, Jung Hyuk (Materials and Life Science Division, Korea Institute of Science and Technology (KIST)) ;
  • Hwang, Do Kyung (Post Silicon Semiconductor Institute, Korea Institute of Science and Technology (KIST)) ;
  • Choi, Won Kook (Materials and Life Science Division, Korea Institute of Science and Technology (KIST))
  • Received : 2015.07.14
  • Accepted : 2015.07.20
  • Published : 2015.07.31

Abstract

Indium free consisting of three alternating layers GTO/Ag/GTO has been fabricated by radio-frequency (RF) sputtering for the applications as transparent conducting electrodes and the structural, electrical and optical properties of the gallium tin oxide (GTO) films were carefully studied. The gallium tin oxide thin films deposited at room temperature are found to have an amorphous structure. Hall Effect measurements show a strong influence on the conductivity type where it changed from n-type to p-type at $700^{\circ}C$. GTO/Ag/GTO multilayer structured electrode with a few nm of Ag layer embedded is fabricated and show the optical transmittance of 86.48% in the visible range (${\lambda}$ = 380~770 nm) and quite low electrical resistivity of ${\sim}10^{-5}{\Omega}cm$. The resultant power conversion efficiency of 2.60% of the multilayer based OPV (GAG) is lower than that of the reference commercial ITO. GTO/Ag/GTO multilayer is a promising transparent conducting electrode material due to its low resistivity, high transmittance, low temperature deposition and low cost components.

Keywords

References

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