DOI QR코드

DOI QR Code

Properties of IZTO Thin Films Deposited on PEN Substrates with Different Working Pressures

  • Park, Jong-Chan (Department of Electronic Engineering, Inha University) ;
  • Kang, Seong-Jun (Department of Electrical and Semiconductor Engineering, Chonnam National University) ;
  • Yoon, Yung-Sup (Department of Electronic Engineering, Inha University)
  • 투고 : 2015.04.06
  • 심사 : 2015.05.12
  • 발행 : 2015.05.31

초록

In this work, the properties of Indium-Zinc-Tin-Oxide (IZTO) thin films, deposited on polyethylene naphthalate (PEN) with a $SiO_2$ buffer layer, were analyzed with different working pressures. After depositing the $SiO_2$ buffer layer on PEN substrates by plasma-enhanced chemical vapor deposition (PECVD), the IZTO thin films were deposited by RF magnetron sputtering with 1 to 7-mTorr working pressure. All the IZTO thin films show an amorphous structure, regardless of the working pressure. The best morphological, electrical, and optical properties are obtained at 3-mTorr working pressure, with a surface roughness of 2.112-nm, a sheet resistance of $8.87-{\Omega}/sq$, and a transmittance at 550-nm of 88.44%. These results indicate that IZTO thin films deposited on PEN have outstanding electrical and optical properties, and the PEN plastic substrate is a suitable material for display devices.

키워드

참고문헌

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  4. Effects of Working Pressure on Structural and Optical Properties of HfO2 Thin Films vol.12, pp.6, 2015, https://doi.org/10.13067/jkiecs.2017.12.6.1019
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