조명전기설비학회논문지 (Journal of the Korean Institute of Illuminating and Electrical Installation Engineers)

한국조명전기설비학회 (The Korean Institute of IIIuminating and Electrical Installation Engineers)
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966nm 근적외선 레이저를 이용한 고저항성 바나듐 이산화물 박막 기반 2단자 평면형 소자에서의 양방향 전류 트리거링

Bidirectional Current Triggering in Two-Terminal Planar Device Based on Highly Resistive Vanadium Dioxide Thin Film Using 966nm Near Infrared Laser

  • Kim, Jihoon (Pukyong National University, School of Electrical Engineering) ;
  • Lee, Yong Wook (Pukyong National University, School of Electrical Engineering)
  • 투고 : 2015.06.19
  • 심사 : 2015.09.30
  • 발행 : 2015.11.30
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초록

By incorporating a 966nm near infrared laser, we demonstrated bidirectional current triggering of between 0 and 10mA in a two-terminal planar device based on a highly resistive vanadium dioxide ($VO_2$) thin film grown by a pulsed laser deposition method. A two-terminal planar device, which had an electrode separation of $100{\mu}m$ and a $50{\mu}m-wide$ $VO_2$ conducting layer, was fabricated through ion beam-assisted milling and photolithographic techniques. A bias voltage range for stable bidirectional current triggering was determined by investigating the current-voltage curves of the $VO_2-based$ device in a current-controlled mode. Bidirectional current triggering of up to 10mA was realized by directly illuminating the $VO_2$ film with a focused infrared laser beam, and the transient responses of triggered currents were analyzed when the laser was modulated at various pulse widths and repetition rates. A switching contrast between off- and on-state currents was evaluated as ~3571, and the rising and falling times were measured as ~40 and ~20ms, respectively.

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참고문헌

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