한국전기전자재료학회논문지 (Journal of the Korean Institute of Electrical and Electronic Material Engineers)

  • 제28권4호
  • /
  • Pages.218-221
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  • 2015
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  • 1226-7945(pISSN)
  • /
  • 2288-3258(eISSN)
한국전기전자재료학회 (The Korean Institute of Electrical and Electronic Material Engineers)
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온-저항 특성 향상을 위한 게이트 패드 구조에 관한 연구

Characteristic of On-resistance Improvement with Gate Pad Structure

  • 강예환 (메이플세미컨덕터 신사업본부) ;
  • 유원영 (메이플세미컨덕터 신사업본부) ;
  • 김우택 (메이플세미컨덕터 신사업본부) ;
  • 박태수 (메이플세미컨덕터 신사업본부) ;
  • 정은식 (메이플세미컨덕터 신사업본부) ;
  • 양창헌 (메이플세미컨덕터 신사업본부)
  • 투고 : 2015.02.03
  • 심사 : 2015.03.24
  • 발행 : 2015.04.01
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초록

Power MOSFETs (metal oxide semiconductor field effect transistor) operate as energy control semiconductor switches. In order to reduce energy loss of the device during switch-on state, it is essential to increase its conductance. In this study we have investigated a structure to reduce the on-resistance characteristics of the MOSFET. We have a proposed MOSFET structure of active cells region buried under the gate pad. The measurement are carried out with a EDS to analyze electrical characteristics, and the proposed MOSFET are compared with the conventional MOSFET. The result of proposed MOSFET was 1.68[${\Omega}$], showing 10% improvement compared to the conventional MOSFET at 700[V].

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참고문헌

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