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Effect of Se Flux and Se Treatment on the Photovoltaic Performance of β-CIGS Solar Cells

  • Kim, Ji Hye (Dept. of Materials Science and Engineering, Korea Advanced Institute of Science and Technology) ;
  • Cha, Eun Seok (Dept. of Materials Science and Engineering, Korea Advanced Institute of Science and Technology) ;
  • Park, Byong Guk (Dept. of Materials Science and Engineering, Korea Advanced Institute of Science and Technology) ;
  • Ahn, Byung Tae (Dept. of Materials Science and Engineering, Korea Advanced Institute of Science and Technology)
  • Received : 2015.06.08
  • Accepted : 2015.06.11
  • Published : 2015.06.30

Abstract

$Cu(In,Ga)_3Se_5$ (${\beta}-CIGS$) has a band gap of 1.35 eV which is an optimum value for high solar-energy conversion efficiency. However, ${\beta}-CIGS$ film was not well characterized yet due to lower efficiency compared to $Cu(In,Ga)Se_2$ (${\alpha}-CIGS$). In this work, ${\beta}-CIGS$ films were fabricated by a three-stage co-evaporation of elemental sources with various Se fluxes. As the Se flux increased, the crystallinity of ${\beta}-CIGS$ phase was improved from the analysis of Raman spectroscopy and a deep-level defect was reduced from the analysis of photoluminescence spectroscopy. A Se treatment of the ${\beta}-CIGS$ film at $200^{\circ}C$ increased Ga content and decreased Cu content at the surface of the film. With the Se treatment at $200^{\circ}C$, the cell efficiency was greatly improved for the CIGS films prepared with low Se flux due to the increase of short-circuit current and fill factor. It was found that the main reason of performance improvement was lower Cu content at the surface instead of higher Ga content.

Keywords

References

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