Current Photovoltaic Research

  • 제3권1호
  • /
  • Pages.27-31
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  • 2015
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  • 2288-3274(pISSN)
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  • 2508-125X(eISSN)
한국태양광발전학회 (Korea Photovoltaic Society)
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Sulfurization 온도와 Cu/(In+Ga) 비가 Cu(In,Ga)Se2 박막 내 S 함량에 미치는 영향

Effects of sulfurization temperature and Cu/(In+Ga) ratio on Sulfur content in Cu(In,Ga)Se2 thin films

  • 고영민 (한국과학기술원 신소재공학과) ;
  • 김지혜 (한국과학기술원 신소재공학과) ;
  • 신영민 (한국과학기술원 신소재공학과) ;
  • ;
  • 안병태 (한국과학기술원 신소재공학과)
  • Ko, Young Min (Department of Materials Science and Engineering, KAIST) ;
  • Kim, Ji Hye (Department of Materials Science and Engineering, KAIST) ;
  • Shin, Young Min (Department of Materials Science and Engineering, KAIST) ;
  • Chalapathy, R.B.V. (Department of Materials Science and Engineering, KAIST) ;
  • Ahn, Byung Tae (Department of Materials Science and Engineering, KAIST)
  • 투고 : 2015.02.23
  • 심사 : 2015.03.03
  • 발행 : 2015.03.31
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초록

It is known that sulfide at the $Cu(In,Ga)Se_2$ ($CIGSe_2$) surface plays a positive role in $CIGSe_2$ solar cells. We investigated the substitution of S with Se on the $CIGSe_2$ surface in S atmosphere. We observed that the sulfur content in the $CIGSe_2$ films changed according to sulfurization temperature and Cu/(In+Ga) ratio. The sulfur content in the $CIGSe_2$ films increased with increasing the annealing temperature and Cu/(In+Ga) ratio. Also Cu migration toward the surface increased at higher temperature. Since high Cu concentration at the $CIGSe_2$ surface is detrimental role, it is necessary to reduce the S annealing temperature as low as $200^{\circ}C$. The cell performance was improved at $200^{\circ}C$ sulfurization.

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참고문헌

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