Korean Chemical Engineering Research

The Korean Institute of Chemical Engineers (한국화학공학회)
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Effect of SiC Crystal Phase on Growing ZSM-5 on the Surface of SiC

탄화규소 결정상의 종류가 탄화규소 표면에 ZSM-5가 형성되는데 미치는 영향

  • Jung, Eunjin (Energy & Environmental Devision, Korea Institute of Ceramic Engineering and Technology) ;
  • Lee, Yoon Joo (Energy & Environmental Devision, Korea Institute of Ceramic Engineering and Technology) ;
  • Kim, Younghee (Energy & Environmental Devision, Korea Institute of Ceramic Engineering and Technology) ;
  • Kwon, Woo Teck (Energy & Environmental Devision, Korea Institute of Ceramic Engineering and Technology) ;
  • Shin, Dong-Geun (Energy & Environmental Devision, Korea Institute of Ceramic Engineering and Technology) ;
  • Kim, Soo Ryong (Energy & Environmental Devision, Korea Institute of Ceramic Engineering and Technology)
  • Received : 2014.07.18
  • Accepted : 2014.09.17
  • Published : 2015.04.01
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Abstract

ZSM-5 crystals grew on the surface of ${\alpha}$-SiC and ${\beta}$-SiC particles by hydrothermal synthesis method. SiC particles which were > $50{\mu}m$ of size were used, and oxide layer were developed on the surface of the particles to induce growth of ZSM-5 from the surface. Then, synthesis time and temperature condition were considered growing ZSM-5. In this study, oxide layer was formed on ${\beta}$-SiC at $900^{\circ}C$ in air, and it was controlled to grow ZSM-5 grew from the ${\beta}$-SiC surface with $150^{\circ}C$ synthesis condition. This is due to Si-O-Si or Si-O-Al bond, which is basic framework of ZSM-5 can be easily formed, from the silicon oxide film on the surface of ${\beta}$-SiC. When the synthesis temperature was $200^{\circ}C$, the size of ZSM-5 was increased, and it covered much area of the SiC surface with better crystal shapes with longer synthesis time.

${\alpha}$-상 과 ${\beta}$-상 두 가지 종류의 탄화규소(SiC) 입자 표면에 수열 합성 방법으로 ZSM-5 결정을 형성하였다. SiC는 $50{\mu}m$ 이상이 되는 크기의 입자를 사용하였으며, ZSM-5 결정이 SiC 표면에서부터 성장하도록 유도하기 위하여 합성 단계에 앞서 SiC 표면에 산화층을 형성하였으며, 수열합성 온도와 시간을 변화시켜 보았다. 그 결과 ${\beta}$-SiC는 $900^{\circ}C$ 조건에서도 산화막이 형성되었으며, 특히 $150^{\circ}C$ 합성 조건에서 ZSM-5가 ${\beta}$-SiC 표면에서부터 성장하였음이 뚜렷이 관찰되었다. $200^{\circ}C$ 조건에서는 ZSM-5의 결정의 크기가 성장할 뿐 아니라, 시간의 증가에 따라 결정의 형태가 뚜렷해지고 SiC 표면에 도포되는 양이 증가하는 것을 확인할 수 있었다.

Keywords

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