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A Cache-based Reconfigurable Accelerator in Die-stacked DRAM

3차원 구조 DRAM의 캐시 기반 재구성형 가속기

  • 김용주 (한국전자통신연구원 임베디드SW부)
  • Received : 2014.10.30
  • Accepted : 2015.01.19
  • Published : 2015.02.28

Abstract

The demand on low power and high performance system is soaring due to the extending of mobile and small electronic device market. The 3D die-stacking technology is widely studying for next generation integration technology due to its high density and low access time. We proposed the 3D die-stacked DRAM including a reconfigurable accelerator in a logic layer of DRAM. Also we discuss and suggest a cache-based local memory for a reconfigurable accelerator in a logic layer. The reconfigurable accelerator in logic layer of 3D die-stacked DRAM reduces the overhead of data management and transfer due to the characteristics of its location, so that can increase the performance highly. The proposed system archives 24.8 speedup in maximum.

컴퓨터 사용 환경이 모바일 시장 및 소형 전자기기 시장 등으로 다양해짐에 따라 저전력 고성능 시스템에 대한 요구도 커지고 있다. 3차원 die-stacking 기술은 한정된 공간에서 DRAM의 집적도과 접근 속도를 높여 차세대 공정방식으로 많은 연구가 되고 있다. 이 논문에서는 3차원 구조의 DRAM 로직층에 재구성형 가속기를 구현하여 저전력 고성능 시스템을 구성하는 방법을 제안한다. 또한 재구성형 가속기의 지역 메모리로 캐시를 적용하고 활용하는 방법에 대해서 논의한다. DRAM의 로직층에 재구성형 가속기를 구현할 경우 위치적인 특성으로 데이터 전송 및 관리에 필요한 비용이 줄어들어 성능을 크게 향상시킬 수 있다. 제안된 시스템에서는 최대 24.8의 스피드업을 기록하였다.

Keywords

References

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